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Characterization of polycrystalline silicon carbide films grown by atmospheric pressure chemical vapor deposition on polycrystalline silicon

Published online by Cambridge University Press:  31 January 2011

Christian A. Zorman ,
Shuvo Roy ,
Chien-Hung Wu ,
Aaron J. Fleischman  and
Mehran Mehregany
Christian A. Zorman
Affiliation:
Department of Electrical Engineering and Applied Physics, Case Western Reserve University, Cleveland, Ohio 44106
Shuvo Roy
Affiliation:
Department of Electrical Engineering and Applied Physics, Case Western Reserve University, Cleveland, Ohio 44106
Chien-Hung Wu
Affiliation:
Department of Materials Science and Engineering, Case Western Reserve University, Cleveland, Ohio 44106
Aaron J. Fleischman
Affiliation:
Department of Electrical Engineering and Applied Physics, Case Western Reserve University, Cleveland, Ohio 44106
Mehran Mehregany
Affiliation:
Department of Electrical Engineering and Applied Physics, Case Western Reserve University, Cleveland, Ohio 44106
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X-ray diffraction, transmission electron microscopy, and Rutherford backscattering spectroscopy were used to characterize the microstructure of polycrystalline SiC films grown on as-deposited and annealed polysilicon substrates. For both substrate types, the texture of the SiC films resembles the polysilicon at the onset of SiC growth. During the high temperature deposition process, the as-deposited polysilicon recrystallizes without influencing the crystallinity of the overlying SiC. An investigation of the SiC/polysilicon interface reveals that a heteroepitaxial relationship exists between polysilicon and SiC grains. From this study, a method to control the orientation of highly textured polycrystalline SiC films has been developed.

Type
Articles
Information
Journal of Materials Research , Volume 13 , Issue 2 , February 1998 , pp. 406 - 412
Copyright
Copyright © Materials Research Society 1998

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