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c-axis lithium niobate thin film growth on silicon using solid-source metalorganic chemical vapor deposition

Published online by Cambridge University Press:  31 January 2011

S. Y. Lee  and
R. S. Feigelson
S. Y. Lee*
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, California 94305
R. S. Feigelson
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, California 94305
*
a)Address all correspondence to this author. e-mail: [email protected]
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Abstract

Textured c-axis oriented LiNbO3 films have been grown for waveguiding applications on silicon substrates by the solid-source metalorganic chemical vapor deposition (MOCVD) method using tetramethylheptanedionate sources. Thermally grown SiO2 layers were used as cladding layers to provide optical confinement in the LiNbO3 films. The texture direction could be varied from the [006] to the [012] direction by either increasing the growth temperature and/or decreasing the growth rate. Under optimal growth conditions, 100% [006] texturing could be achieved without the aid of an electric field or by using a SiNx buffer layer. The crystallinity and surface rms roughness of c-axis oriented films were found to be strongly dependent on the growth rate. Rocking curve full-width half-maximum (FWHM) values of (006) peaks could be decreased to less than 2° by increasing the growth rate. The surface roughness also decreased with growth rate, and rms values as low as 1.5 nm were achieved. On the other hand, too high a growth rate leads to increased roughness due to gas phase nucleation. The optical losses were closely correlated with surface roughness, and the best films had optical losses near 4.5 dB/cm at a wavelength of 632.8 nm.

Type
Articles
Information
Journal of Materials Research , Volume 14 , Issue 6 , June 1999 , pp. 2662 - 2667
Copyright
Copyright © Materials Research Society 1999

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