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Ca-doped lead zirconate titanate thin film capacitors on base metal nickel on copper foil

Published online by Cambridge University Press:  01 October 2004

Taeyun Kim ,
Angus I. Kingon ,
Jon-Paul Maria  and
Robert T. Croswell
Taeyun Kim
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695
Angus I. Kingon
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695
Jon-Paul Maria
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695
Robert T. Croswell
Affiliation:
Motorola Advanced Technology Center, Schaumburg, Illinois 60196
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Abstract

Ca-doped lead zirconate titanate (52/48) thin film capacitors were prepared on electroless nickel-coated copper foils for embedded capacitor applications. The impact of Ca doping and process parameter variations was studied. Ca addition significantly reduced the temperature coefficient of capacitance. Specifically, the temperature variation was reduced to less than 10% between 300 and 580 K through calcium addition. Optimized capacitance densities and loss tangents were 400 nF/cm2 and 0.02, respectively. Crystallization temperatures of 600 °C yielded these optimized electrical properties, while higher temperatures resulted in interfacial reactions. The influence of oxygen partial pressure during crystallization was also studied. Dielectric properties were sensitive to pO2, with optimal properties occurring in a narrow pO2 window centered about 10−3 Torr. The trends with oxygen pressure were mirrored by changes in phase assemblage. Electrical transport across the dielectric layers was not strongly dependent upon doping level. This insensitivity was attributed to a thin interfacial layer present in all samples. Interface analysis using equivalent circuit analogues showed the nature of the interface to be highly resistive (insulating), rather than semiconducting or conducting.

Keywords

KineticsFerroelectrics
Type
Articles
Information
Journal of Materials Research , Volume 19 , Issue 10 , October 2004 , pp. 2841 - 2848
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

1Madou, A. and Martens, L.: Electrical behavior of decoupling capacitors embedded in multilayered PCBs. IEEE Trans. on Electromag. Compatibility 43, 549 (2001).CrossRefGoogle Scholar
2Chen, L-S., Fu, S-L. and Huang, K-D.: Barium titanate-based capacitors buried into ceramic substrates. Jpn. J. Appl. Phys. 37 L1241 (1998).CrossRefGoogle Scholar
3Bhattacharya, S.K. and Tummala, R.R.: Next generation integral passives: Materials, processes, and integration of resistors and capacitors on PWB substrates. J. Mater. Sci. – Mater. Electron. 11, 253 (2000).CrossRefGoogle Scholar
4Rao, Y., Ogitani, S., Kohl, P. and Wong, C.P.: Novel high-dielectric constant nano-structure polymer-ceramic composite for embedded capacitor application. Proc. ECTC . 183 (2000).Google Scholar
5Ramesh, S., Shutzberg, B.A., Huang, C., Gao, J. and Giannelis, E.P.: Dielectric nanocomposites for integral thin film capacitors: Materials design, fabrication and integration issues. IEEE Trans. Adv. Packaging 26, 17 (2003).CrossRefGoogle Scholar
6Weiss, D.G.: Changes in the PCB world with new packaging technologies and the integration of passive components into the PCB. Circuit World 24, 6 (1998).CrossRefGoogle Scholar
7Pohl, H.: Superdielectrics polymers. IEEE Trans. Electrical Insulation. EI 21, 683 (1986).CrossRefGoogle Scholar
8Saegusa, K.: Preparation and electrical properties of sol-gel derived lead zirconate titanate glass-ceramic thin films on metal foil substrates. Jpn. J. Appl. Phys. 36, 6888 (1997).CrossRefGoogle Scholar
9Zou, Q., Ruda, H.E. and Yacobi, B.G.: Improved dielectric properties of lead zirconate titanate thin films deposited on metal foils with LaNiO3 buffer layers. Appl. Phys. Lett. 78, 1282 (2001).CrossRefGoogle Scholar
10Maria, J.P., Cheek, K., Streiffer, S., Kim, S.H., Dunn, G. and Kingon, A.: Lead zirconate titanate thin films on base-metal foils: An approach for embedded high-permittivity passive components. J. Am. Ceram. Soc. 84, 2436 (2001).CrossRefGoogle Scholar
11Dawley, J.T. and Clem, P.G.: Dielectric properties of random and (100) oriented SrTiO3 and (Ba,Sr)TiO3 thin films fabricated on 〈100〉 nickel tapes. Appl. Phys. Lett. 81, 3028 (2002).CrossRefGoogle Scholar
12Kholkin, A., Seifert, A. and Setter, N.: Electromechanical properties of sol-gel derived Ca-modified PbTiO3 films. Appl. Phys. Lett. 72, 3374 (1998).CrossRefGoogle Scholar
13Cerqueira, M., Nasar, R.S., Longo, E., Varela, J.A., Beltran, A., Llusar, R. and Andres, J.: Piezoelectric behavior of PZT doped with calcium: A combined experimental and theoretical study. J. Mater. Sci. 32, 2381 (1997).CrossRefGoogle Scholar
14Chewasatn, S. and Milne, S.J.: Sol-gel synthesis and electrical characterization of (Pb, Ca)TiO3 thin films. J. Mat. Sci. 32, 575 (1997).CrossRefGoogle Scholar
15Kim, S-H., Kim, D-J., Hong, J., Streiffer, S.K. and Kingon, A.I.: Imprint and fatigue properties of chemical solution derived Pb1- x Lax (Zry Ti1-y )1-x/4O3 thin films. J. Mater. Res. 14, 1371 (1999).CrossRefGoogle Scholar
16Xu, J., Wilkinson, A.P. and Pattanaik, S.: Solution processing of calcium zirconate titanates, Ca(Zr x Ti1-x )O3: An x-ray absorption spectroscopy and powder diffraction study. Chem. Mater. 12, 3321 (2000).CrossRefGoogle Scholar
17Bartic, A.T., Wouters, D.J., Sing, J., Norga, G., Bender, H., and Maes, H.E.: Quantitative determination of the dielectric constant of the interfacial layer in PZT ferroelectric capacitors. In Proceedings of the IEEE Inter. Symposium on Appl. of Ferroelectrics. 11th, Montreux, Switzerland, Aug. 24–27 (1998) p. 73.Google Scholar
18Jaffe, B., Cooke, W.R. Jr. and Jaffe, H.: Piezoelectric Ceramics (Academic Press, New York, 1971), p 153Google Scholar
19Kulcsar, F.: Electromechanical properties of lead titanate zirconate ceramics with lead partially replaced by calcium or strontium. J. Am. Ceram. Soc. 42, 49 (1959).CrossRefGoogle Scholar
20Hennings, D.F.K. and Schreinemacher, H.: Ca-acceptors in dielectric ceramics sintered in reductive atmospheres. J. Eur. Ceram. Soc. 15, 795 (1995).CrossRefGoogle Scholar
21Tsur, Y. and Randall, C.A.: How trivalent amphoteric dopants in BaTiO3 ceramics improve reliability of capacitors. In Fundamental Physics of Ferroelectrics 2000, AIP Conference Proceedings 535 (2000), p. 283.CrossRefGoogle Scholar
22Raymond, M.V. and Smyth, D.M.: Defects and charge transport in perovskite ferroelectrics. J. Phys. Chem. Solids. 57, 1507 (1996).CrossRefGoogle Scholar
23Fox, G.R.: X-ray diffraction method for determining textured volume fractions in PZT thin films, in Ferroelectric Thin Films VII, edited by Jones, R.E., Schwartz, R.W., Summerfelt, S.R., and Yoo, I.K. (Mater. Res. Soc. Proc. 541,Warrendale, PA, 1999), p. 529Google Scholar
24Brooks, K.G., Reaney, I.M., Klissurska, R., Huang, Y., Bursill, L. and Setter, N.: Orientation of rapid thermally annealed lead zirconate titanate thin films on (111) Pt substrates. J. Mater. Res. 9, 2540 (1994).CrossRefGoogle Scholar
25Chen, S-Y. and Chen, I-W.: Temperature-time texture transition of Pb(Zr1-xTix)O3 thin films: II, heat treatment and compositional effects. J. Am. Ceram. Soc. 77, 2337 (1994).CrossRefGoogle Scholar
26Kwok, C.K. and Desu, S.B.: Role of oxygen vacancies on the ferroelectric properties of lead zirconate titanate (PZT) thin films. in Ferroelectric Thin Films II, edited by Kingon, A.I., Myers, E.R., and Tuttle, B. (Mat. Res. Soc. Proc. 243 Pittsburgh, PA 1992.) p. 393.Google Scholar