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Atomic layer deposition of epitaxial HfO2 thin films on r-cut sapphire

Published online by Cambridge University Press:  17 May 2013

Hugo Mändar ,
Raul Rammula ,
Aleks Aidla  and
Jaan Aarik
Hugo Mändar*
Affiliation:
Institute of Physics, University of Tartu, EE-51014 Tartu, Estonia
Raul Rammula
Affiliation:
Institute of Physics, University of Tartu, EE-51014 Tartu, Estonia
Aleks Aidla
Affiliation:
Institute of Physics, University of Tartu, EE-51014 Tartu, Estonia
Jaan Aarik
Affiliation:
Institute of Physics, University of Tartu, EE-51014 Tartu, Estonia
*
a)Address all correspondence to this author. e-mail: [email protected]
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Abstract

Textured epitaxial HfO2 thin films of monoclinic structure were grown on r-cut Al2O3 by atomic layer deposition from HfCl4 and H2O at temperatures 450–750 °C. The film-to-substrate out-of-plane orientation was determined to have a single (001)HfO2//(1$\bar 1$02)α-Al2O3 relationship. The in-plane orientation showed the existence of two possible relationships: [100]HfO2//[110]α-Al2O3 and [$\bar 1$00]HfO2//[110]α-Al2O3. In films deposited at 400 °C traces of (010) growth plane were observed in addition to the preferential (001) growth. The lattice of HfO2 was compressed in the surface plane and expanded in the surface normal direction. The strain was highest in the films grown at 450–550 °C. With the increase of deposition temperature to 750 °C, the strain decreased. The strain relaxation in films deposited at 750 °C was in correlation with marked surface roughening in the initial stage of deposition at this temperature. The roughness of the epitaxial films was lower than that of polycrystalline films with comparable thickness deposited on Si(100) and SiO2 substrates.

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Articles
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Journal of Materials Research , Volume 28 , Issue 13: FOCUS ISSUE: Frontiers in Thin-Film Epitaxy and Nanostructured Materials , 14 July 2013 , pp. 1680 - 1686
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Copyright © Materials Research Society 2013 

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