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Analysis of nitride films on silicon substrates by ion beam methods

Published online by Cambridge University Press:  03 March 2011

Z.S. Zheng ,
J.R. Liu ,
X.T. Cui ,
W.K. Chu ,
S.P. Rangarajan  and
D.M. Hoffman
Z.S. Zheng
Affiliation:
Texas Center for Superconductivity, University of Houston, Houston, Texas 77204–5932
J.R. Liu
Affiliation:
Texas Center for Superconductivity, University of Houston, Houston, Texas 77204–5932
X.T. Cui
Affiliation:
Texas Center for Superconductivity, University of Houston, Houston, Texas 77204–5932
W.K. Chu
Affiliation:
Texas Center for Superconductivity, University of Houston, Houston, Texas 77204–5932
S.P. Rangarajan
Affiliation:
Department of Chemistry, University of Houston, Houston, Texas 77204–5641
D.M. Hoffman
Affiliation:
Department of Chemistry, University of Houston, Houston, Texas 77204–5641
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Abstract

The simultaneous determination of light element contamination levels and accurate nitrogen-to-metal ratios in nitride thin films deposited on silicon substrates is demonstrated by using α-particle beam energies in the range 3–4 MeV. In this energy range, significant light element sensitivity enhancements are observed, while the heavy elements show classical Rutherford behavior. The use of resonance scattering at different resonance energies is shown to be the method of choice for analyzing BN films on silicon. Also, a technique is suggested for analyzing very thin films in which an aluminum foil substrate and buffer layer are used to enhance sensitivities.

Type
Articles
Information
Journal of Materials Research , Volume 10 , Issue 12 , December 1995 , pp. 3124 - 3128
Copyright
Copyright © Materials Research Society 1995

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References

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