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An investigation of the crystalline and electronic structures of a 4:3:3:4 layered Bi–Ca–Sr–Cu oxide

Published online by Cambridge University Press:  31 January 2011

M.D. Giardin
Affiliation:
Institute of Advanced Materials, C. E. C. Joint Research Centre, Ispra Establishment, 21020 Ispra (Va), Italy
R. Feduzi
Affiliation:
Institute of Advanced Materials, C. E. C. Joint Research Centre, Ispra Establishment, 21020 Ispra (Va), Italy
A. Manara
Affiliation:
Institute of Advanced Materials, C. E. C. Joint Research Centre, Ispra Establishment, 21020 Ispra (Va), Italy
J.C. Spirlet
Affiliation:
Institute for Transuranium Elements, C. E. C. Joint Research Centre, Karlsruhe Establishment, D–7500 Karlsruhe, Germany
M. Zocchi
Affiliation:
Department of Mechanical Engineering, University of Brescia, 25100 Brescia, Italy
L.E. Depero
Affiliation:
Department of Mechanical Engineering, University of Brescia, 25100 Brescia, Italy
S. Mobilio
Affiliation:
Puls, I.N.F.N. Frascati Centre, 00044 Frascati (Roma), Italy
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Abstract

Semiconducting samples of a Bi–Ca–Sr–Cu oxide, having a nominal composition 4:3:3:4, were prepared by melting high purity oxides of the various elements. Superconducting samples were obtained by annealing the semiconducting samples at a temperature close to the melting temperature. Electrical resistivity measurements indicated the presence of two superconducting phases, one with the onset temperature at about 110 K, the other with a significantly lower onset temperature. The presence of this second phase is proven by the x-ray powder diffraction patterns. The crystalline structures of both the semiconductor and superconductor samples have almost equal lattice parameters and are orthorhombic, but belong to different space groups: Fmmm and Bbmm, respectively. No significant amount of the 110 K superconducting phase was present in the diffraction pattern of the superconducting compound. XPS and XANES data on the Ca atom indicate that a different electronic state of Ca is present in the superconducting compound, which still contains an appreciable amount of the semiconducting phase.

Type
Articles
Copyright
Copyright © Materials Research Society 1991

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References

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