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Adhesion of Chemical Vapor Deposited Boron Carbo-nitride to Dielectric and Copper Films

Published online by Cambridge University Press:  01 August 2005

E.R. Engbrecht ,
P.R. Fitzpatrick ,
K.H. Junker ,
Y-M. Sun ,
J.M. White  and
J.G. Ekerdt
E.R. Engbrecht
Affiliation:
Department of Chemical Engineering, The University of Texas at Austin, Austin, Texas 78712
P.R. Fitzpatrick
Affiliation:
Department of Chemical Engineering, The University of Texas at Austin, Austin, Texas 78712
K.H. Junker
Affiliation:
Freescale Semiconductor, Austin, Texas 78721
Y-M. Sun
Affiliation:
Department of Chemistry and Biochemistry, The University of Texas at Austin, Austin, Texas 78712
J.M. White
Affiliation:
Department of Chemistry and Biochemistry, The University of Texas at Austin, Austin, Texas 78712
J.G. Ekerdt*
Affiliation:
Department of Chemical Engineering, The University of Texas at Austin, Austin, Texas 78712
*
b) Address all correspondence to this author. e-mail: [email protected]
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Abstract

The interfacial adhesion energy was studied using the four-point bend method for boron carbo-nitride (BCxNy) deposited on dielectric and copper films. Twenty-five nanometer BCxNy films were deposited by chemical vapor deposition at 360 °C and 1 Torr using dimethylamine borane with no coreactant, NH3, or C2H4, producing different composition films, BC0.37N0.15, BC0.11N0.49, BC0.92N0.07, with dielectric constants of 4.1, 4.2, and 3.8, respectively. BCxNy films were deposited on dense and porous dielectrics, and copper. BCxNy films adhered strongly to the dielectric films and the composite beams snapped before debonding, revealing that the critical debond energy Gc exceeded 10 J/m2. The adhesion of BCxNy to oxidized copper increased with carbon content in the film, with the BC0.92N0.07 film beams snapping, and is possibly related to covalent bonding between surface oxygen and carbon in the film.

Keywords

AdhesionBarrier layerInsulator
Type
Articles
Information
Journal of Materials Research , Volume 20 , Issue 8 , August 2005 , pp. 2218 - 2224
Copyright
Copyright © Materials Research Society 2005

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