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Ultraviolet laser-induced formation of thin silicon oxide film from the precursor β-chloroethyl silsesquioxane

Published online by Cambridge University Press:  31 January 2011

Jaya Sharma ,
Donald H. Berry ,
Russell J. Composto  and
Hai-Lung Dai
Jaya Sharma
Affiliation:
Laboratory for Research on the Structure of Matter, University of Pennsylvania, Philadelphia, Pennsylvania 19104-6202
Donald H. Berry
Affiliation:
Laboratory for Research on the Structure of Matter, University of Pennsylvania, Philadelphia, Pennsylvania 19104-6202
Russell J. Composto
Affiliation:
Laboratory for Research on the Structure of Matter, University of Pennsylvania, Philadelphia, Pennsylvania 19104-6202
Hai-Lung Dai
Affiliation:
Laboratory for Research on the Structure of Matter, University of Pennsylvania, Philadelphia, Pennsylvania 19104-6202
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Abstract

Formation of silicon oxide thin films from spin-coated β-chloroethyl silsesquioxane (β-cesq) on silicon, NaCl, and quartz was induced by 193 nm laser pulses. The silicon oxide deposition is characterized by ir, uv, ellipsometry, and Rutherford backscattering spectrometry. The silicon oxide films obtained by uv irradiation were found to have much less carbon and chlorine as impurities and have a higher refractive index as compared to those obtained by annealing. The photoinduced oxide films were found to be smooth, without laser-induced microrough or periodic structures.

Type
Articles
Information
Journal of Materials Research , Volume 14 , Issue 3 , March 1999 , pp. 990 - 994
Copyright
Copyright © Materials Research Society 1999

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References

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