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Transmission electron microscopy observation of oxide layer growth on Cu nanoparticles and formation process of hollow oxide particles

Published online by Cambridge University Press:  31 January 2011

D. Tokozakura
Affiliation:
The Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567-0047, Japan
R. Nakamura*
Affiliation:
The Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567-0047, Japan
H. Nakajima
Affiliation:
The Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567-0047, Japan
J.-G. Lee
Affiliation:
Korea Institute of Machinery and Materials, Changwon-City 641-831, Korea
H. Mori
Affiliation:
Research Center for Ultra-High Voltage Electron Microscopy, Osaka University, Ibaraki, Osaka 567-0047, Japan
*
a)Address all correspondence to this author. e-mail: [email protected]
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Abstract

The growth of a Cu2O layer on Cu nanoparticles at 323–373 K was investigated by transmission electron microscopy to elucidate the influence of voids formed at the Cu/Cu2O interface on the oxidation rate. The thickness of the Cu2O formed on Cu nanoparticles with an initial diameter of 10 to ∼35 nm was measured as a function of oxidation time. During the initial oxidation stage until the oxide film is about 2.5 nm thick, the oxide film on nanoparticles of 10 to ∼35 nm in diameter grows rapidly at an almost consistent rate. After that, however, the growth rate of smaller nanoparticles decreases drastically compared with that of larger ones, suggesting that the voids formed near the Cu/Cu2O interface prevent Cu atoms from diffusing outward, because the volume ratio of voids to inner Cu in the case of smaller nanoparticles is considerably higher than that for larger ones at the same oxidation time.

Type
Articles
Copyright
Copyright © Materials Research Society 2007

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References

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