Hostname: page-component-cd9895bd7-fscjk Total loading time: 0 Render date: 2025-01-01T18:11:12.995Z Has data issue: false hasContentIssue false
  • English
  • Français

Three-dimensional visualization of dislocation-precipitate interactions in a Al–4Mg–0.3Sc alloy using weak-beam dark-field electron tomography

Published online by Cambridge University Press:  01 March 2011

G.S. Liu  and
I.M. Robertson
G.S. Liu
Affiliation:
Department of Materials Science and Engineering, University of Illinois at Urbana−Champaign, Urbana, Illinois 61801
I.M. Robertson*
Affiliation:
Department of Materials Science and Engineering, University of Illinois at Urbana−Champaign, Urbana, Illinois 61801
*
a)Address all correspondence to this author. e-mail: [email protected]
Get access

Abstract

Weak-beam dark-field images of dislocations interacting with particles acquired over a large angular range were used to reconstruct tomograms, which were then used as the basis to construct a three-dimensional (3D) model of the dislocation structure. These capabilities facilitate viewing the dislocation structure from different directions, recovering the information lost in the electron beam direction. Coupling these capabilities and a method to include the specimen coordinate system within them with conventional dislocation analysis enables a full characterization of the dislocation microstructure in three dimensions. This approach is used to understand the 3D nature of the interaction of dislocations and a twist boundary with Al3Sc particles in an Al–Mg–Sc alloy.

Keywords

DislocationsTransmission electron microscopyAl
Type
Articles
Information
Journal of Materials Research , Volume 26 , Issue 4 , 28 February 2011 , pp. 514 - 522
Copyright
Copyright © Materials Research Society 2011

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Footnotes

b)

This author was an editor of this journal during the review and decision stage. For the JMR policy on review and publication of manuscripts authored by editors, please refer to http://www.mrs.org/jmr_policy.

References

REFERENCES

1.Humphreys, F.J. and Hirsch, P.B.: The deformation of single crystals of copper and copper-zinc alloys containing alumina particles. II. Microstructure and dislocation-particles interactions. Proc. R. Soc. London, A 318, 73 (1970).Google Scholar
2.Clark, B.G., Robertson, I.M., Dougherty, L.M., Ahn, D.C., and Sofronis, P.: High-temperature dislocation-precipitate interactions in Al alloys: An in situ transmission electron microscopy deformation study. J. Mater. Res. 20, 1792 (2005).CrossRefGoogle Scholar
3.Dougherty, L.M., Robertson, I.M., and Vetrano, J.S.: Direct observation of the behavior of grain boundaries during continuous dynamic recrystallization in an Al-4Mg-0.3Sc alloy. Acta Mater. 51, 4367 (2003).CrossRefGoogle Scholar
4.Xiang, Y., Srolovitz, D.J., Cheng, L.T., and Weinan, E.: Level set simulations of dislocation-particle bypass mechanisms. Acta Mater. 52, 1745 (2004).CrossRefGoogle Scholar
5.Xiang, Y., Chang, L.T., Srolovitz, D.J., and Weinan, E.: A level set method for dislocation dynamics. Acta Mater. 51, 5499 (2003).CrossRefGoogle Scholar
6.Xiang, Y. and Srolovitz, D.J.: Dislocation climb effects on particle bypass mechanisms. Philos. Mag. 86, 3937 (2006).Google Scholar
7.Dougherty, L.M.: Ph.D. Thesis, University of Illinois at Urbana−Champaign, 2003.Google Scholar
8.Clark, B.G.: Ph.D. Thesis, University of Illinois at Urbana−Champaign, 2006.Google Scholar
9.McEwen, B.F. and Marko, M.: The emergence of electron tomography as an important tool for investigating cellular ultrastructure. J. Histochem. Cytochem. 49, 553 (2001).CrossRefGoogle ScholarPubMed
10.McEwen, B.F., Renken, C., Marko, M., Mannella, C., John, J.C., and Detrich, I.W.: Principles and practice in electron tomography. Methods Cell Biol. 89, 129 (2008).CrossRefGoogle ScholarPubMed
11.Midgley, P.A. and Dunin-Borkowski, R.E.: Electron tomography and holography in materials science. Nat. Mater. 8, 271 (2009).CrossRefGoogle ScholarPubMed
12.Sharp, J.H., Kaneko, J.S.B.K., Higashida, K., and Midgley, P.A.: Dislocation tomography made easy: A reconstruction from ADF STEM images obtained using automated image shift correction. J. Phys. Conf. Ser. 126, (2008).CrossRefGoogle Scholar
13.Barnard, J.S., Sharp, J., Tong, J.R., and Midgley, P.A.: Weak-beam dark-field electron tomography of dislocations in GaN. J. Phys. Conf. Ser. 26, 247 (2006).Google Scholar
14.Tanaka, M., Higashida, K., Kaneko, K., Hata, S., and Mitsuhara, M.: Crack tip dislocations revealed by electron tomography in silicon single crystal. Scr. Mater. 59, 901 (2008).CrossRefGoogle Scholar
15.Tanaka, M., Honda, M., Mitsuhara, M., Hata, S., Kaneko, K., and Higashida, K.: Three-dimensional observation of dislocations by electron tomography in a silicon crystal. Mater. Trans. 49, 1953 (2008).CrossRefGoogle Scholar
16.Tanaka, M., Liu, G.S., Kishida, T., Higashida, H., and Robertson, I.M.: Transition from a punched-out dislocation to a slip dislocation revealed by electron tomography. J. Mater. Res. 25, 2292 (2010).CrossRefGoogle Scholar
17.Tanaka, M., Sadamatsu, S., Liu, G.S., Nakamura, H., Higashida, H., and Robertson, I.M.: Sequential multiplication of dislocation sources along a crack front revealed by HVEM-tomography. J. Mater. Res. (in press).Google Scholar

Liu Supplementary Material

Liu Supplementary Film 01

Download Liu Supplementary Material(Video)
Video 15.7 MB

Liu Supplementary Material

Liu Supplementary Film 02

Download Liu Supplementary Material(Video)
Video 15.5 MB