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Texture Analysis of Thin In2O3:Sn Films Prepared by Direct-current and Radio-frequency Magnetron-sputtering

Published online by Cambridge University Press:  03 March 2011

Dieter Mergel ,
Karola Thiele  and
Zhaohui Qiao
Dieter Mergel*
Affiliation:
Universität Duisburg-Essen, Fachbereich Physik, Campus Essen, 45117 Essen, Germany
Karola Thiele
Affiliation:
Universität Göttingen, Institut für Materialphysik, 37073 Göttingen, Germany
Zhaohui Qiao
Affiliation:
Universität Duisburg-Essen, Fachbereich Physik, Campus Essen, 45117 Essen, Germany
*
a) Address all correspondence to this author. e-mail: [email protected]
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Abstract

Thin In2O3:Sn (ITO) films prepared by radio-frequency (rf) or direct-current (dc) magnetron-sputtering and in central or peripheral position relative to the target were characterized by x-ray diffractograms and pole figures. The diffractograms were normalized with the powder diffraction intensities of the target. In the normalized diffractograms, a random texture level and preferred orientations can be distinguished. The pole figures are represented by normalized χ-scans that are modeled as a sum of Gaussian curves. The centers of the Gaussian curves are consistent with the prominent orientations of the normalized diffractograms. The textures of the rf-sputtered films in the central and the peripheral position are similar, showing strong contributions from (211)-planes. The texture of dc-sputtered samples is dominated by (400) and (411) planes. In the peripheral sample, the distribution of (400)- and (411)-oriented grains is shifted towards the incidence angle of the particle flux and the frequency of the (222)-grains is suppressed below the random texture level. The results are discussed with reference to a model of incorporation of interstitial oxygen into the growing films.

Keywords

Grain growthMicrostructureSputtering
Type
Articles
Information
Journal of Materials Research , Volume 20 , Issue 9 , September 2005 , pp. 2503 - 2509
Copyright
Copyright © Materials Research Society 2005

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