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The surface morphological evolution of ultrathin SiC buffer layer grown on Si (100) substrate by atmospheric pressure chemical vapor deposition

Published online by Cambridge University Press:  09 August 2012

Biao Shi ,
Ming-Xing Zhu ,
Xue-Chao Liu ,
Jian-Hua Yang  and
Er-Wei Shi
Biao Shi
Affiliation:
Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201800, China; and Graduate School of the Chinese Academy of Sciences, Beijing 100049, China
Ming-Xing Zhu
Affiliation:
Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201800, China; and Graduate School of the Chinese Academy of Sciences, Beijing 100049, China
Xue-Chao Liu*
Affiliation:
Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201800, China
Jian-Hua Yang
Affiliation:
Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201800, China
Er-Wei Shi
Affiliation:
Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201800, China
*
a)Address all correspondence to this author. e-mail: [email protected]
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Abstract

Ultrathin SiC buffer layers have been grown on Si (100) substrates by atmospheric pressure chemical vapor deposition. The evolution of buffer layer morphological properties as a function of carbonization parameters is investigated by atomic force microscopy. Based on the quantitative analysis of the dependences of void density, void depth, void width, and surface roughness on carbonization parameters, a buffer layer growth model is proposed, and the effects of carbonization parameters on buffer layer morphology are clarified. The void density is related to the carbonization temperature, temperature ramp-up rate, and C3H8 concentration by affecting the initial SiC nuclei density. The void size is evolved with processing time and mainly dependent on the carbonization temperature but slightly affected by C3H8 and H2. The buffer layer morphology is deteriorated with increasing H2 flow rate when the C3H8 concentration is fixed.

Keywords

carbonizationchemical vapor deposition (CVD)morphology
Type
Articles
Information
Journal of Materials Research , Volume 28 , Issue 1: Focus Issue: Silicon Carbide – Materials, Processing and Devices , 14 January 2013 , pp. 113 - 119
Copyright
Copyright © Materials Research Society 2012

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References

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