Hostname: page-component-586b7cd67f-dlnhk Total loading time: 0 Render date: 2024-11-24T20:00:32.540Z Has data issue: false hasContentIssue false
  • English
  • Français

Strong below-band gap absorption of N-rich side GaNSb by metal-organic chemical vapor deposition

Published online by Cambridge University Press:  31 January 2011

Se-Hoon Moon ,
Hyung-A Do ,
Joonmo Park  and
Sang-Wan Ryu
Sang-Wan Ryu*
Affiliation:
Department of Physics, Chonnam National University, Gwangju 500-757, Korea
*
a) Address all correspondence to this author. e-mail: [email protected]
Get access

Abstract

Metalorganic chemical vapor deposition was used to grow N-rich side GaNSb alloys under different growth conditions, and, for the first time, a considerable amount of Sb was incorporated into the GaNSb. The amount of Sb increased as the growth temperature decreased, but the maximal Sb content seemed to be limited by the solid solubility of Sb in GaN. Absorption spectroscopy of the GaNSb revealed a strong absorption band below the band gap of GaN. The below-band gap absorption extended to 0.8 eV, which makes GaNSb a promising material to serve as an infrared absorption layer on GaN.

Keywords

III-VMetalorganic depositionOptical properties
Type
Articles
Information
Journal of Materials Research , Volume 24 , Issue 12 , December 2009 , pp. 3569 - 3572
Copyright
Copyright © Materials Research Society 2009

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Iwata, K., Asahi, H., Asami, K., Kuoiwa, R., and Gond, S.: GaN-rich side of GaNAs growth by gas source molecular beam epitaxy. Jpn. J. Appl. Phys. 37, 1436 (1998).CrossRefGoogle Scholar
2.Foxon, C.T., Novikov, S.V., Cheng, T.S., Davis, C.S., Campion, R.P., Winser, A.J., and Harrison, I.: Arsenic-doped GaN grown by molecular beam epitaxy. J. Cryst. Growth 219, 327 (2000).CrossRefGoogle Scholar
3.Foxon, C.T., Harrison, I., Novikov, S.V., Li, T., Campion, R.P., Staddon, C.R., Davis, C.S., Winser, A.J., Kovarsky, A.P., and Ja Ber, B.: The influence of arsenic incorporation on the optical properties of As-doped GaN films grown by molecular beam epitaxy using As4 molecules. J. Cryst. Growth 234, 343 (2002).CrossRefGoogle Scholar
4.Foxon, C.T., Novikov, S.V., Li, T., Campion, R.P., Campion, R.P., Winser, A.J., Harrison, I., Kappers, M.J., and Humphreys, C.J.: Arsenic incorporation in GaN during growth by molecular beam epitaxy. J. Cryst. Growth 251, 510 (2003).CrossRefGoogle Scholar
5.Kimura, A., Tang, H.F., and Kuech, T.F.: Growth of GaNAs alloys on the N-rich side with high As content by metalorganic vapor phase epitaxy. J. Cryst. Growth 265, 71 (2004).CrossRefGoogle Scholar
6.Takayama, T., Yuri, M., Itoh, K., and Harris, J.S.: Theoretical predictions of unstable two phase regions in wurtzite group-III-nitride-based ternary and quaternary material systems using modified valence-force-field model. J. Appl. Phys. 90, 2358 (2001).CrossRefGoogle Scholar
7.Yoshida, S., Kikawa, J., and Itoh, Y.: Crystal growth of nitride-rich GaNP by laser-assisted metalorganic chemical-vapor deposition. J. Cryst. Growth 237–239, 1037 (2002).CrossRefGoogle Scholar
8.Chen, D.J., Shen, B., Bi, Z.X., Zhang, K.X., Gu, S.L., Zhang, R., Shi, Y., Zheng, Y.D., Sun, X.H., Wan, S.K., and Wang, Z.G.: GaN1-xPx ternary alloys with high P composition grown by metal-organic chemical vapor deposition. J. Cryst. Growth 255, 52 (2003).CrossRefGoogle Scholar
9.Veal, T.D., Piper, L.F.J., Jollands, S., Bennett, B.R., Jefferson, P.H., Thomas, P.A., McConville, C.F., Murdin, B.N., Buckle, L., Smith, G.W., and Ashley, T.: Band gap recuction in GaNSb alloys due to the anion mismatch. Appl. Phys. Lett. 87, 132101 (2005).CrossRefGoogle Scholar
10.Jefferson, P.H., Veal, T.D., Piper, L.F.J., Bennett, B.R., McConville, C.F., Murdin, B.N., Buckle, L., Smith, G.W., and Ashley, T.: Band anticrossing in GaNxSb1-x. Appl. Phys. Lett. 89, 111921 (2006).CrossRefGoogle Scholar
11.Zhang, L., Tang, H.F., and Kuech, T.F.: Effect of Sb as a surfactant during the lateral epitaxial overgrowth of GaN by metal organic vapor phase epitaxy. Appl. Phys. Lett. 79, 3059 (2001).CrossRefGoogle Scholar
12.Gokhale, A.A., Kuech, T.F., and Mavrikakis, M.: Surfactant effect of Sb on GaN growth. J. Cryst. Growth 285, 146 (2005).CrossRefGoogle Scholar
13.Zhang, L., Tang, H.F., Schieke, J., Mavrikakis, M., and Kuech, T.F.: The addition of Sb as a surfactant to GaN growth by metal organic vapor phase epitaxy. J. Appl. Phys. 92, 2304 (2002).CrossRefGoogle Scholar
14.Pei, C.W., Turk, B., Heroux, J.B., and Wang, W.I.: GaN grown by molecular beam epitaxy with antimony as surfactant. J. Vac. Sci. Technol., B 19, 1426 (2001).CrossRefGoogle Scholar