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Role of beam divergence and ion-to-molecule flux ratio in ion-beam-assisted deposition texturing of MgO

Published online by Cambridge University Press:  03 March 2011

Alp T. Findikoglu ,
Sascha Kreiskott ,
Paul M. te Riele  and
Vladimir Matias
Alp T. Findikoglu*
Affiliation:
Superconductivity Technology Center, MS T004, Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545
Sascha Kreiskott
Affiliation:
Superconductivity Technology Center, MS T004, Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545
Paul M. te Riele
Affiliation:
Superconductivity Technology Center, MS T004, Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545
Vladimir Matias
Affiliation:
Superconductivity Technology Center, MS T004, Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545
*
a)Address all correspondence to this author. e-mail: [email protected]
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Abstract

The effect of process conditions on the biaxial texture of MgO films grown by ion-beam-assisted deposition (IBAD) was studied. The texture showed a strong dependence on the Ar+/MgO flux ratio, but a weak dependence on the divergence of Ar+ beam. One hundred-nanometer-thick epi-MgO on less than 10-nm-thick textured IBAD-MgO films that were grown on 7-nm-thick Y2O3 layers on fused silica, metal alloy tape, and polished Si substrates showed biaxial texture with in- and out-of-plane orientation distributions of less than 4° and 2°, respectively. These results strengthen the notion that the IBAD technique could serve as a universal technological process to integrate amorphous and polycrystalline substrates with various oxide and semiconductor films that need to be grown with good biaxial texture.

Keywords

Ion-beam assisted depositionTextureThin film
Type
Articles
Information
Journal of Materials Research , Volume 19 , Issue 2 , February 2004 , pp. 501 - 504
Copyright
Copyright © Materials Research Society 2004

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