Hostname: page-component-586b7cd67f-2plfb Total loading time: 0 Render date: 2024-11-24T16:50:54.487Z Has data issue: false hasContentIssue false
  • English
  • Français

Reverse polarity effect from effective charge disparity during electromigration in eutectic Sn–Zn solder interconnect

Published online by Cambridge University Press:  31 January 2011

X.F. Zhang ,
J.D. Guo  and
J.K. Shang
X.F. Zhang
Affiliation:
Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, People’s Republic of China
J.D. Guo
Affiliation:
Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, People’s Republic of China
J.K. Shang*
Affiliation:
Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, People’s Republic of China; and Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
*
a)Address all correspondence to this author. e-mail: [email protected]
Get access

Abstract

Polarity effect on the interfacial reactions from high-density electric currents was investigated in a solder interconnect with a large disparity in the effective charge between the solder constituents. A reverse polarity effect was found where the intermetallic compound layer at the cathode grew significantly thicker than that at the anode under electric loading. Such an abnormal polarity effect was shown to result from electromigrations of Sn and Zn along opposite directions as dictated by the disparity in their effective charges. As Sn migrated to the anode under electron wind force, the resulting back stress drove Zn atoms to drift to the cathode. A kinetic analysis of the Zn mass transport explained the differential growth of the intermetallic compounds at the two electrodes, in good agreement with the experimental data.

Keywords

ElectromigrationSoldering
Type
Articles
Information
Journal of Materials Research , Volume 23 , Issue 12: Biomimetic and Bio-enabled Materials Science and Engineering , December 2008 , pp. 3370 - 3378
Copyright
Copyright © Materials Research Society 2008

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1Lee, T.Y., Tu, K.N., Kuo, S.M., Frear, D.R.: Electromigration of eutectic SnPb solder interconnects for flip chip technology. J. Appl. Phys. 89, 3189 2001CrossRefGoogle Scholar
2Yeh, E.C.C., Choi, W.J., Tu, K.N., Elenius, P., Balkan, H.: Current-crowding-induced electromigration failure in flip chip solder joints. Appl. Phys. Lett. 80, 580 2002CrossRefGoogle Scholar
3Blech, I.A.: Electromigration in thin aluminum films on titanium nitride. J. Appl. Phys. 47, 1203 1976CrossRefGoogle Scholar
4Hsu, Y.C., Chou, C.K., Liu, P.C., Chen, C., Yao, D.J., Chou, T., Tu, K.N.: Electromigration in thin aluminum films on titanium nitride. J. Appl. Phys. 98, 033523 2005CrossRefGoogle Scholar
5Yang, Q.L., Shang, J.K.: Interfacial segregation of Bi current stressing of Sn–Bi/Cu solder interconnect. J. Electron. Mater. 34, 1363 2005CrossRefGoogle Scholar
6Huntington, H.B., Grone, A.R.: Current induced marker motion in gold wires. J. Phys. Chem. Solids 20, 76 1961CrossRefGoogle Scholar
7Huynh, Q.T., Liu, C.Y., Chen, C., Tu, K.N.: Electromigration in eutectic SnPb solder lines. J. Appl. Phys. 89, 4332 2001Google Scholar
8Daghfal, J.P., Shang, J.K.: Current-induced phase partitioning in eutectice indium-tin Pb-free solder interconnect. J. Electron. Mater. 36, 1372 2007CrossRefGoogle Scholar
9Huang, C.W., Lin, K.L.: Wetting properties and interfacial reactions in lead-free Sn–Zn based solders on Cu and Cu plated with an electroless Ni–P/Au layer. Mater. Trans. 45, 588 2004CrossRefGoogle Scholar
10Kim, K.S., Yang, J.M., Yu, C.H., Jung, I.O., Kim, H.H.: Analysis on interfacial reactions between Sn–Zn solders and the Au/Ni electrolytic-plated Cu pad. J. Alloys Compd. 379, 314 2004CrossRefGoogle Scholar
11Paul, S.H., Thomas, K.: Electromigration in metals. Rep. Prog. Phys. 52, 301 1989Google Scholar
12Zhang, X.F., Guo, J.D., Shang, J.K.: Abnormal polarity effect of electromigration on intermetallic compound formation in Sn–9Zn solder interconnect. Scr. Mater. 57, 513 2007CrossRefGoogle Scholar
13Huang, C.W., Lin, K.L.: Interfacial reactions of lead-free Sn–Zn based solders on Cu and Cu plated electroless Ni–P/Au layer under aging at 150 °C. J. Mater. Res. 19, 3560 2004CrossRefGoogle Scholar
14Tu, K.N.: Recent advances on electromigration in very-large-scale-integration of interconnects. J. Appl. Phys. 94, 5451 2003CrossRefGoogle Scholar
15Gan, H., Tu, K.N.: Polarity effect of electromigration on kinetics of intermetallic compound formation in Pb-free solder V-groove samples. J. Appl. Phys. 97, 063514 2005CrossRefGoogle Scholar
16Liu, C.Y., Chen, C., Liao, C.N., Tu, K.N.: Microstructure-electromigration correlation in a thin stripe of eutectic SnPb solder stressed between Cu electrodes. Appl. Phys. Lett. 75, 58 1999CrossRefGoogle Scholar
17Brandes, E.A.: Smithells Metals Reference Book 6th ed.Butterworth Washington, DC 1983Google Scholar
18Conrad, H.: Effects of electric current on solid-state phase transformations in metals. Mater. Sci. Eng., A 287, 227 2000CrossRefGoogle Scholar
19Blech, I.A., Herring, C.: Stress generation by electromigration. Appl. Phys. Lett. 29, 131 1976CrossRefGoogle Scholar
20Smigelkes, A.D., Kirkendall, E.O.: Zinc diffusion in alpha brass. Trans. AIME 171, 130 1947Google Scholar
21Komiyama, M., Tsukamoto, H., Matsuda, T., Ogino, Y.: Diffusion-coefficients of indium and tin in In–Sn alloys determined by auger-electron spectroscopy using xenon ion-bombardment. J. Mater. Sci. Lett. 5, 673 1986CrossRefGoogle Scholar
22Reddy, K.V., Prasad, J.J.B.: Electromigration in indium thin-films. J. Appl. Phys. 55, 1546 1984CrossRefGoogle Scholar