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Reduced electrical resistivity of reaction-sintered SiC by nitrogen doping

Published online by Cambridge University Press:  31 January 2011

Young-Sam Jeon ,
Hyunho Shin ,
Young-Hyun Lee  and
Sang-Won Kang
Young-Sam Jeon
Affiliation:
Device and Materials Laboratory, LG Electronics Institute of Technology, Woomyeon-dong, Seocho-gu, Seoul 137-724, Republic of Korea; and Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Yusong-gu, Daejeon 305-701, Republic of Korea
Hyunho Shin*
Affiliation:
Department of Ceramic Engineering, Kangnung National University, Kangnung, Jibyun-dong, 210-702, Republic of Korea
Young-Hyun Lee
Affiliation:
Device and Materials Laboratory, LG Electronics Institute of Technology, Woomyeon-dong, Seocho-gu, Seoul 137-724, Republic of Korea
Sang-Won Kang
Affiliation:
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Yusong-gu, Daejeon 305-701, Republic of Korea
*
a)Address all correspondence to this author. e-mail: [email protected]
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Abstract

A post heat treatment of reaction-sintered SiC at 1700 °C in nitrogen atmosphere significantly reduced electrical resistivity. A trace of insulating Si3N4 phase was detected via nitrogen heat treatment in high-resolution transmission electron microscopy observation; however, based on x-ray photoelectron spectroscopy, the evidence of nitrogen doping into SiC lattice has been claimed as the mechanism to the decreased resistivity. The increase of the total volume of SiC was apparent in x-ray diffraction during the nitrogen heat treatment, which was interpreted to stem from the growth of the nitrogen-doped intergranular SiC particles and surface doping of the primary SiC to reduce the contact resistance between the primary SiC particles.

Keywords

CeramicSinteringDopant
Type
Articles
Information
Journal of Materials Research , Volume 23 , Issue 4 , April 2008 , pp. 1020 - 1025
Copyright
Copyright © Materials Research Society 2008

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References

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