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Properties of nanostructured diamond-silicon carbide composites sintered by high pressure infiltration technique

Published online by Cambridge University Press:  03 March 2011

G.A. Voronin ,
T.W. Zerda ,
J. Gubicza ,
T. Ungár  and
S.N. Dub
G.A. Voronin
Affiliation:
Department of Physics and Astronomy, Texas Christian University, Fort Worth, Texas 76129
T.W. Zerda*
Affiliation:
Department of Physics and Astronomy, Texas Christian University, Fort Worth, Texas 76129
J. Gubicza
Affiliation:
Department of Solid State Physics, Eötvös University, Budapest H-1518, Hungary
T. Ungár
Affiliation:
Department of General Physics, Eötvös University, Budapest H-1518, Hungary
S.N. Dub
Affiliation:
Institute for Superhard Materials of the NAS of Ukraine, Kiev 02074, Ukraine
*
a) Address all correspondence to this author. e-mail address: [email protected]
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Abstract

A high-pressure silicon infiltration technique was applied to sinter diamond–SiC composites with different diamond crystal sizes. Composite samples were sintered at pressure 8 GPa and temperature 2170 K. The structure of composites was studied by evaluating x-ray diffraction peak profiles using Fourier coefficients of ab initio theoretical size and strain profiles. The composite samples have pronounced nanocrystalline structure: the volume-weighted mean crystallite size is 41–106 nm for the diamond phase and 17–37 nm for the SiC phase. The decrease of diamond crystal size leads to increased dislocation density in the diamond phase, lowers average crystallite sizes in both phases, decreases composite hardness, and improves fracture toughness.

Keywords

CompositeNanoscaleSintering
Type
Articles
Information
Journal of Materials Research , Volume 19 , Issue 9 , September 2004 , pp. 2703 - 2707
Copyright
Copyright © Materials Research Society 2004

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