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Preparation of Lutetium Nitride by Direct Nitridation

Published online by Cambridge University Press:  03 March 2011

Takayuki Suehiro ,
Naoto Hirosaki ,
Yoshinobu Yamamoto ,
Toshiyuki Nishimura ,
Mamoru Mitomo ,
Junichi Takahashi  and
Hisanori Yamane
Takayuki Suehiro*
Affiliation:
Advanced Materials Laboratory, National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan
Naoto Hirosaki
Affiliation:
Advanced Materials Laboratory, National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan
Yoshinobu Yamamoto
Affiliation:
Advanced Materials Laboratory, National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan
Toshiyuki Nishimura
Affiliation:
Advanced Materials Laboratory, National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan
Mamoru Mitomo
Affiliation:
Advanced Materials Laboratory, National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan
Junichi Takahashi
Affiliation:
Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Sendai 980-8577, Japan
Hisanori Yamane
Affiliation:
Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Sendai 980-8577, Japan
*
a)Address all correspondence to this author. e-mail: [email protected]
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Abstract

Lutetium nitride (LuN), an end member of a new quaternary system Si3N4–SiO2–Lu2O3–LuN, was synthesized by direct nitridation of a lutetium metal. The nitridation extent of the lutetium ingot (10 × 5 × 2 mm) reached about 97% by heating at 1600 °C for 8 h with an applied N2 pressure of 0.92 MPa; the initial shape of the bulk metal was maintained in the course of nitridation. The resulting nitrided lutetium possessed a moderately low oxygen content (∼0.7 wt%), which enables the preparation of uncharacterized high nitrogen-containing phases in the Lu–Si–O–N system.

Keywords

CeramicFiringStructural
Type
Articles
Information
Journal of Materials Research , Volume 19 , Issue 3 , March 2004 , pp. 959 - 963
Copyright
Copyright © Materials Research Society 2004

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