Hostname: page-component-586b7cd67f-t7czq Total loading time: 0 Render date: 2024-11-28T09:42:40.784Z Has data issue: false hasContentIssue false
  • English
  • Français

Preparation of CuIn(SxSe1–x)2 thin films with tunable band gap by controlling sulfurization temperature of CuInSe2

Published online by Cambridge University Press:  31 January 2011

Guangjun Wang ,
Gang Cheng ,
Binbin Hu ,
Xiaoli Wang ,
Shaoming Wan ,
Sixin Wu  and
Zuliang Du
Guangjun Wang
Affiliation:
Key Laboratory for Special Functional Materials of Ministry of Education, Henan University, Kaifeng 475004, People's Republic of China
Gang Cheng
Affiliation:
Key Laboratory for Special Functional Materials of Ministry of Education, Henan University, Kaifeng 475004, People's Republic of China
Binbin Hu
Affiliation:
Key Laboratory for Special Functional Materials of Ministry of Education, Henan University, Kaifeng 475004, People's Republic of China
Xiaoli Wang
Affiliation:
Key Laboratory for Special Functional Materials of Ministry of Education, Henan University, Kaifeng 475004, People's Republic of China
Shaoming Wan
Affiliation:
Key Laboratory for Special Functional Materials of Ministry of Education, Henan University, Kaifeng 475004, People's Republic of China
Sixin Wu
Affiliation:
Key Laboratory for Special Functional Materials of Ministry of Education, Henan University, Kaifeng 475004, People's Republic of China
Zuliang Du*
Affiliation:
Key Laboratory for Special Functional Materials of Ministry of Education, Henan University, Kaifeng 475004, People's Republic of China
*
a)Address all correspondence to this author. e-mail: [email protected]
Get access

Abstract

In this paper, polycrystalline CuIn(SxSe1–x)2 thin films with tunable x and Eg (band gap) values were prepared by controlling the sulfurization temperature (T) of CuInSe2 thin films. X-ray diffraction indicated the CuIn(SxSe1–x)2 films exhibited a homogeneous chalcopyrite structure. When T increases from 150 to 500 °C, x increases from 0 to 1, and Eg increases from 0.96 to 1.43 eV. The relations between x and Eg and the sulfurization process of CuIn(SxSe1–x)2 thin films have been discussed. This work provides an easy and low-cost technique for preparing large area absorber layers of solar cell with tunable Eg.

Keywords

ElectrodepositionFilmPhotovoltaic
Type
Articles
Information
Journal of Materials Research , Volume 25 , Issue 12 , December 2010 , pp. 2426 - 2429
Copyright
Copyright © Materials Research Society 2010

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Adurodija, F.O., Song, J., Asia, I.O., Yoon, K.H.: Formation of CuIn(S,Se)2 thin film by thermal diffusion of sulfur and selenium vapors into Cu-In alloy within a closed graphite container. Sol. Energy Mater. Sol. Cells 58, 287 (1999)CrossRefGoogle Scholar
2.Engelmann, M., McCandless, B.E., Birkmire, R.W.: Formation and analysis of graded CuIn(Se1–ySy)2 films. Thin Solid Films 387, 14 (2001)CrossRefGoogle Scholar
3.Zaretskaya, E.P., Gremenok, V.F., Zalesski, V.B., Bente, K., Schorr, S., Zukotynski, S.: Properties of Cu(In,Ga)(S,Se)2 thin films prepared by selenization/sulfurization of metallic alloys. Thin Solid Films 515, 5848 (2007)CrossRefGoogle Scholar
4.Contreras, M.A., Egaas, B., Ramanathan, K., Hiltner, J., Swartzlander, A., Hasoon, F., Noufi, R.: Progress toward 20% efficiency in Cu(In,Ga)Se2 polycrystalline thin-film solar cells. Prog. Photovoltaics Res. Appl. 7, 311 (1999)3.0.CO;2-G>CrossRefGoogle Scholar
5.Repins, I., Contreras, M.A., Egaas, B., DeHart, C., Scharf, J., Perkins, C.L., To, B., Noufi, R.: 19.9%-efficient ZnO/CdS/CuInGaSe2 solar cell with 81.2% fill factor. Prog. Photovoltaics Res. Appl. 16, 235 (2008)CrossRefGoogle Scholar
6.Yamaguchi, T., Naoyama, T., Lee, H.S., Yoshida, A., Kobata, T., Niiyama, S., Nakamura, T.: Preparation of CuIn(S,Se)2 thin films by thermal crystallization in sulfur and selenium atmosphere. J. Phys. Chem. Solids 64, 1831 (2003)CrossRefGoogle Scholar
7.Shirakata, S., Terasako, T., Kariya, T.: Properties of CuIn(SxSe1–x)2 polycrystalline thin films prepared by chemical spray pyrolysis. J. Phys. Chem. Solids 66, 1970 (2005)CrossRefGoogle Scholar
8.Ramaiah, K.S., Raja, V.S.: AES and XPS analyses of CuIn(S1–xSex) thin films grown by spray pyrolysis technique. Scr. Mater. 44, 771 (2001)CrossRefGoogle Scholar
9.Chavhan, S., Sharma, R.: Growth, structural and optical properties of non-stoichiometric CuIn(S1–xSex) thin films deposited by solution growth technique for photovoltaic application. J. Phys. Chem. Solids 67, 767 (2006)CrossRefGoogle Scholar
10.Kuranouchi, S., Nakazawa, T.: Study of one-step electrodeposition condition for preparation of CuIn(Se,S)2 thin films. Sol. Energy Mater. Sol. Cells 50, 31 (1998)CrossRefGoogle Scholar
11.Djebbour, Z., Dubios, A.M., Darga, A., Mencaraglia, D., Bazin, C., Connolly, J.P., Guillemoles, J-F., Lincot, D., Canava, B., Etcheberry, A.: Comparison of optical and electrical gap of electrodeposited CuIn(S,Se)2 determined by spectral photo response and I-V-T measurements. Thin Solid Films 515, 6233 (2007)CrossRefGoogle Scholar
12.Roussel, O., Lamirand, M., Naghavi, N., Guillemoles, J.F., Canava, B., Etcheberry, A.: Interfacial chemistry control in thin film solar cells based on electrodeposited CuIn(S,Se)2. Thin Solid Films 515, 6123 (2007)CrossRefGoogle Scholar
13.Ohashi, T., Inakoshi, K., Hashimoto, Y., Ito, K.: Preparation of CuIn(SxSe1–x)2 thin films by sulfurization and selenization. Sol. Energy Mater. Sol. Cells 50, 37 (1998)CrossRefGoogle Scholar
14.Bandyopadhyaya, S., Roy, S., Chaudhuri, S., Pal, A.K.: CuIn(SxSe1–x)2 films prepared by graphite box annealing of In/Cu stacked elemental layers. Vacuum 62, 61 (2001)CrossRefGoogle Scholar
15.Bekker, J., Alberts, V., Leitch, A.W.R., Botha, J.R.: Properties of CuIn(Se,S)2 thin films prepared by two-step growth processes. Thin Solid Films 431–432, 116 (2003)CrossRefGoogle Scholar
16.Izquierdo-Roca, V., Fontané, X., Álvarez-Garcia, J., Calvo-Barrio, L., Pérez-Rodríguez, A., Morante, J.R., Ruiz, C.M., Saucedo, E., Bermúdez, V.: Electrochemical synthesis of CuIn(S,Se)2 alloys with graded composition for high efficiency solar cells. Appl. Phys. Lett. 94, 061915 (2009)CrossRefGoogle Scholar
17.Turcu, M., Kötschau, I.M., Rau, U.: Band alignments in the Cu(In,Ga)(S,Se)2 alloy system determined from deep-level defect energies. Appl. Phys. A 73, 769 (2001)CrossRefGoogle Scholar
18.Wei, S., Zunger, A.: Band offsets and optical bowings of chalcopyrites and Zn-based II-VI alloys. J. Appl. Phys. 78, 3846 (1995)CrossRefGoogle Scholar