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Preferable orientation of turbostratic BN basal planes from an x-ray absorption study

Published online by Cambridge University Press:  01 January 2006

X.T. Zhou ,
T.K. Sham ,
C.Y. Chan ,
W.J. Zhang ,
I. Bello ,
S.T. Lee ,
F. Heigl ,
A. Jürgenen  and
H. Hofsäss
X.T. Zhou
Affiliation:
Department of Chemistry, University of Western Ontario, London, Ontario, Canada N6A 5B7
T.K. Sham*
Affiliation:
Department of Chemistry, University of Western Ontario, London, Ontario, Canada N6A 5B7
C.Y. Chan
Affiliation:
Center of Super-Diamond and Advanced Films (COSDAF) and Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR, People's Republic of China
W.J. Zhang*
Affiliation:
Center of Super-Diamond and Advanced Films (COSDAF) and Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR, People's Republic of China
I. Bello
Affiliation:
Center of Super-Diamond and Advanced Films (COSDAF) and Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR, People's Republic of China
S.T. Lee
Affiliation:
Center of Super-Diamond and Advanced Films (COSDAF) and Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR, People's Republic of China
F. Heigl
Affiliation:
Canadian Synchrotron Radiation Facility (CSRF) at the Synchrotron Radiation Center, University of Wisconsin–Madison, Madison, Wisconsin 53589-3097
A. Jürgenen
Affiliation:
Canadian Synchrotron Radiation Facility (CSRF) at the Synchrotron Radiation Center, University of Wisconsin–Madison, Madison, Wisconsin 53589-3097
H. Hofsäss
Affiliation:
II. Institute of Physics, University of Göttingen, D-37077 Göttingen, Germany
*
a)Address all correspondence to these authors. e-mail: [email protected] e-mail: [email protected]
a)Address all correspondence to these authors. e-mail: [email protected] e-mail: [email protected]
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Abstract

Two cubic boron nitride (c-BN) thin films (thickness, 80 nm), which were grown on silicon by mass-selected ion beam deposition and thin diamond film-coated silicon by magnetron sputtering technique respectively, were investigated by x-ray absorption near-edge spectroscopy (XANES) at the B K-edge. The angular dependences of the XANES recorded in fluorescence yield (FY) were used to show that the preferable orientation of the sp2-bonded turbostratic BN (t-BN) basal planes at the interfacial layers between the top c-BN film and Si substrate is normal or nearly normal to the substrate, which is consistent with previous transmission electron microscope analysis. The angular dependence was also used to show that the film deposited on diamond-coated Si has a higher relative amount of ordered t-BN at its film-substrate interface than the film on Si substrate. This work that shows a technique to determine the thin film structure, especially the interfacial structure between the thin films and their substrates x-ray absorption fine structure is a powerful mode.

Keywords

Thin filmX-ray fluorescenceTexture
Type
Articles
Information
Journal of Materials Research , Volume 21 , Issue 1 , January 2006 , pp. 147 - 152
Copyright
Copyright © Materials Research Society 2006

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References

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