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Photochemical deposition and characterization of Al2O3 and TiO2

Published online by Cambridge University Press:  31 January 2011

M. D. Hudson ,
C. Trundle  and
C. J. Brierley
M. D. Hudson
Affiliation:
Plessey Research Caswell Limited, Caswell. Towcester, Northamptonshire NN12 8EQ England
C. Trundle
Affiliation:
Plessey Research Caswell Limited, Caswell. Towcester, Northamptonshire NN12 8EQ England
C. J. Brierley
Affiliation:
Plessey Research Caswell Limited, Caswell. Towcester, Northamptonshire NN12 8EQ England
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Abstract

Thin films of aluminum oxide and titanium dioxide have been deposited onto gallium arsenide at low temperatures (<200 °C). A high-pressure xenon–mercury are lamp (1 kW) and a frequency doubled argon ion laser (100 mW at 257 nm) have been used as illumination sources Suitable volatile metallo-organic precursors have been synthesized with strong absorptions at the wavelengths of the light sources. The Al2O3 or TiO2 layers grown at 200 °C or less are amorphous although the anatase phase of TiO2 is deposited at temperatures over 350 °C. Ellipsometry has been used to measure the thickness and refractive index of the films. Films have been deposited onto gold on silicon in order to make simple electrical measurements. Resistivity, dielectric constant, loss factor, and breakdown voltage have been measured. The results shows values in good agreement with the results published on films grown by other CVD techniques using much higher temperatures.

Type
Articles
Information
Journal of Materials Research , Volume 3 , Issue 6 , December 1988 , pp. 1151 - 1157
Copyright
Copyright © Materials Research Society 1988

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References

REFERENCES

1Ehrlich, D. J., Osgood, R. M., and Deutsch, T. F, J. Vac. Sci. Technol. 21, 23 (1982).CrossRefGoogle Scholar
2Haigh, J. and Aylett, M. R., Prog. Quant. Electr. 12, 1 (1988).CrossRefGoogle Scholar
3Jervis, T. R., Menon, S. K., Joyce, E. L., and Carroll, D. W., Mater. Res. Soc. Symp. Proc. 75, 159 (1987).CrossRefGoogle Scholar
4Higashi, G. S., Blonder, G. E., Fleming, C. G., McCrary, V. R., and Donnelly, V. M., J. Vac. Sci. Technol. B 5, 1441 (1987).CrossRefGoogle Scholar
5Donnelly, V. M., Brasen, D., Applebaum, A., and Geva, M., J. Vac. Sci. Technol. 4, 716 (1986).CrossRefGoogle Scholar
6Bradley, D. C., Mekrotra, R. C., and Gaur, D. P., Metal Alkoxides (Academic, London, 1978), p. 215.Google Scholar
7Donaldson, R. W. and Edwards, J. G., Concise Databook of Optical Materials (National Physical Laboratory, Teddington, England, 1983), p. 30.Google Scholar
8Weast, R. C., CRC Handbook of Chemistry and Physics (CRC, Boca Raton, FL, 1987), 68th ed., p. E55.Google Scholar
9Cameron, D. C., Irving, L. D., Jones, G. R., and Woodward, J., Thin Solid Films, 91, 339 (1982).CrossRefGoogle Scholar