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Orientation Control of Lead Zirconate Titanate Film by Combination of Sol-Gel and Sputtering Deposition

Published online by Cambridge University Press:  03 March 2011

Chee-Sung Park ,
Sang-Wook Kim ,
Gun-Tae Park ,
Jong-Jin Choi  and
Hyoun-Ee Kim
Chee-Sung Park
Affiliation:
School of Materials Science and Engineering, Seoul National University, Seoul 151-744, Korea
Sang-Wook Kim
Affiliation:
School of Materials Science and Engineering, Seoul National University, Seoul 151-744, Korea
Gun-Tae Park
Affiliation:
School of Materials Science and Engineering, Seoul National University, Seoul 151-744, Korea
Jong-Jin Choi
Affiliation:
School of Materials Science and Engineering, Seoul National University, Seoul 151-744, Korea
Hyoun-Ee Kim
Affiliation:
School of Materials Science and Engineering, Seoul National University, Seoul 151-744, Korea
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Abstract

Highly oriented lead zirconate titanate (PZT) films were fabricated on a platinized silicon substrate using a combination of sol-gel and radio frequency (RF) magnetron sputtering deposition methods. A sol-gel derived PZT layer highly oriented to the (100) plane was deposited as a seed layer, and PZT with the same composition then was deposited on the seed layer by RF-magnetron sputtering. The film deposited on the seed layer showed a strong (100) preferred orientation, while the film deposited without the seed layer showed a (111) preferred orientation. Furthermore, a thick PZT film of up to 4 μm was able to be deposited without cracks by using the seed layer. The piezoelectric property of the (100) oriented film was much better than that of the (111) oriented film.

Keywords

PiezoelectricThin film
Type
Articles
Information
Journal of Materials Research , Volume 20 , Issue 1 , January 2005 , pp. 243 - 246
Copyright
Copyright © Materials Research Society 2004

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References

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