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Optimization of solution-processed Cu(In,Ga)S2 by tuning series and shunt resistance

Published online by Cambridge University Press:  09 June 2014

Johnathan Charles Armstrong  and
Jingbiao Cui
Johnathan Charles Armstrong
Affiliation:
Department of Physics and Astronomy, University of Arkansas at Little Rock, Little Rock, Arkansas 72204
Jingbiao Cui*
Affiliation:
Department of Physics, University of Memphis, Memphis, Tennessee 38152
*
a)Address all correspondence to this author. e-mail: [email protected]
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Abstract

Solution-processed CuInGaS2 (CIGS) thin-film solar cells are promising for large-scale commercialization due to their economic process although the efficiency still needs to be improved to compete with vacuum-based materials. Systematic studies were performed to optimize the series and shunt resistance of hydrazine-based CIGS solar cells. Optimization was achieved through compositional adjustment of copper (Cu) near the p–n junction and gallium (Ga) near the back contact. Cu adjustments optimized the shunt resistance between 4000 and 5000 Ω cm2. Ga adjustments optimized the series resistance to 2 Ω cm2. Shunt and series resistance play vital roles in the fill factor. Fill factor was hence improved upward of 0.80 with the optimization of Cu and Ga. Chemical etching was also conducted to investigate the durability of the materials and to remove small crystals near the interface. Device conversion efficiencies were improved up to 12.4%. This study provides the implications for improving the device performance of chalcogenide solar cell materials.

Keywords

CIGSsolutionshunt resistanceseries resistancephotovoltaic
Type
Articles
Information
Journal of Materials Research , Volume 29 , Issue 11 , 14 June 2014 , pp. 1309 - 1316
Copyright
Copyright © Materials Research Society 2014 

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References

REFERENCES

Repins, I., Contreras, M.A., Egaas, B., DeHart, C., Scharf, J., Perkins, C.L., To, B., and Noufi, R.: 19.9%-efficient ZnO/CdS/CuInGaSe2 solar cell with 81.2% fill factor. Prog. Photovoltaics 16, 235 (2008).Google Scholar
Kaelin, M., Rudmann, D., and Tiwari, A.N.: Low cost processing of CIGS thin film solar cells. Sol. Energy 77, 749–756 (2004).Google Scholar
Guimard, D., Bodereau, N., Kurdi, J., Guillemoles, J.F., Lincot, D., Grand, P-P., Ben Farrah, M., Taunier, S., Kerrec, O., and Mogensen, P.: Efficient Cu(In,Ga)Se2 based solar cells prepared by electrodeposition. Mater. Res. Bull. 763, B6.9.1–B.9.6 (2003).Google Scholar
Bhattacharya, R.N., Hiltner, J.F., Batchelor, W., Contreras, M.A., Noufi, R., and Sites, J.R.: 15.4% CuIn1-xGaxSe2-based precursor films. Thin Solid Films 361–362, 396–399 (2000).Google Scholar
Kapur, V.K., Bansal, A., Le, P., and Asensio, O.I.: Non-vacuum processing of CuIn1-xGaxSe2 solar cells on rigid and flexible substrates using nanoparticle precursor inks. Thin Solid Films 431–432, 53–57 (2003).Google Scholar
Eberspacher, C., Fredric, C., Pauls, K., and Serra, J.: Thin film CIS alloy PV materials fabricated using non-vacuum, particles-based techniques. Thin Solid Films 387, 18–22 (2001).Google Scholar
Jin, M.H-C., Banger, K.K., Harris, J.D., and Hepp, A.F.: The effect of film composition on the texture and grain size of CuInS2 prepared by chemical spray pyrolysis. Mater. Res. Bull. 763, B8.23.1–B8.23.6 (2003).Google Scholar
Liu, W., Mitzi, D.B., Yuan, M., Kellock, A.J., Chey, S.J., and Gunawan, O.: 12% efficiency CuIn(Se,S)2 photovoltaic device prepared using a hydrazine solution process. Chem. Mater. 22, 1010–1014 (2010).Google Scholar
Todorov, T.K., Gunawan, O., Gokmen, T., and Mitzi, D.B.: Solution-processed Cu(In,Ga)(S,Se)2 absorber yielding a 15.2% efficient solar cell. Prog. Photovoltaics 21, 82–87 (2013).Google Scholar
Mitzi, D.B., Yuan, M., Liu, W., Kellock, A.J., Chey, S.J., Deline, V., and Schrott, A.G.: A high-efficiency solution deposited thin film photovoltaic device. Adv. Mater. 20, 3657–3662 (2008).Google Scholar
Mitzi, D.B., Yuan, M., Liu, W., Kellock, A., Chey, S.J., Schrott, A., and Deline, V.: Solution processing of CIGS absorber layers using a hydrazine-based approach. In Photovoltaics Specialist Conference, 33rd IEEE, DOI: 10.1109/PVSC.2008.4922730 (2008).Google Scholar
Mitzi, D.B., Yuan, M., Liu, W., Kellock, A.J., Chey, S.J., Gignac, L., and Schrott, A.G.: Hydrazine-based deposition route for device quality CIGS films. Thin Solid Films 517, 2158–2162 (2009).Google Scholar
Yuan, M. and Mitzi, D.B.: Solvent properties of hydrazine in the preparation of metal chalcogenide bulk materials and film. Dalton Trans. 31, 1477–2996, 6078 (2009).CrossRefGoogle Scholar
Leskela, M. and Ritala, M.: Atomic layer deposition (ALD): From precursors to thin film structures. Thin Solid Films 409, 138 (2002).Google Scholar
Niinisto, L., Paivasaari, J., Niinisto, J., Putkonen, M., and Nieminen, M.: Advanced electronic and optoelectronic materials by atomic layer deposition: An overview with special emphasis on recent progress in processing of high-k dielectrics and other oxide materials. Phys. Status Solidi A 201, 1443 (2004).Google Scholar
Levy, D.H. and Nelson, S.F.: Thin-film electronics by atomic layer deposition. J. Vac. Sci. Technol. A 30, 018501 (2012).Google Scholar
Kim, J.Y., Choi, Y.J., Park, H.H., Golledge, S., and Johnson, D.C.: Effective atomic layer deposition procedure for Al-dopant distribution in ZnO thin films. J. Vac. Sci. Technol. A 28, 1111 (2010).Google Scholar
Virtuani, A., Lotter, E., and Powalla, M.: Influence of Cu content on electronic transport and shunting behavior of Cu(In,Ga)Se2 solar cells. J. Appl. Phys. 99, 014906 (2006).CrossRefGoogle Scholar
Kessler, J., Chityuttakan, C., Lu, J., Scholdstrom, J., and Stolt, L.: Cu(In,Ga)Se2 thin films grown with a Cu-poor/rich/poor sequence: Growth model and structural considerations. Prog. Photovolt.: Res. Appl. 11, 319–331 (2003).Google Scholar
Shafarman, W.N. and Zhu, J.: Effect of substrate temperature and deposition profile on evaporated Cu(In,Ga)Se2 films and devices. Thin Solid Films 361, 473–477 (2000).Google Scholar
Klenk, R., Walter, T., Schock, H.W., and Cahen, D.: A model for the successful growth of polycrystalline films of CuInSe2 by multisource physical vacuum evaporation. Adv. Mater. 5, 114–119 (1993).CrossRefGoogle Scholar
Kwon, S.H., Lee, D.Y., and Ahn, B.T.: Characterization of Cu(In,Ga)Se2 films prepared by three-stage coevaporation and their application to CIGS solar cells for a 14.48% efficiency. J. Korean Phys. Soc. 39, 655–660 (2001).Google Scholar
Kwon, S.H., Ahn, B.T., Kim, S.K., Yoon, K.H., and Song, J.: Growth of CuIn3Se5 layer on CuInSe2 films and its effect on the photovoltaic properties of In2Se3/CuInSe2 solar cells. Thin Solid Films 323, 265–269 (1998).Google Scholar