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On the optimization of a dc arcjet diamond chemical vapor deposition reactor

Published online by Cambridge University Press:  31 January 2011

S. W. Reeve ,
W. A. Weimer  and
D. S. Dandy
S. W. Reeve
Affiliation:
Chemistry Division, Naval Air Warfare Center, China Lake, California 93555
W. A. Weimer
Affiliation:
Chemistry Division, Naval Air Warfare Center, China Lake, California 93555
D. S. Dandy
Affiliation:
Department of Chemical Engineering, Colorado State University, Fort Collins, Colorado 80523
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Abstract

Based on results from chemical kinetic model calculations, a method to improve diamond film growth in a dc arcjet chemical vapor deposition reactor has been developed. Introducing the carbon source gas (CH4) into an Ar/H2 plasma in close proximity to the substrate produced diamond films exhibiting simultaneous improvements in quality and mass deposition rates. These improvements result from a reduced residence time of the methane in the plasma which inhibits the hydrocarbon chemistry in the gas from proceeding significantly beyond methyl radical production prior to encountering the substrate. Improvements in growth rate were modest, increasing by only a factor of two. Optical emission actinometry measurements indicate that the flux of atomic hydrogen across the stagnation layer to the substrate is mass diffusion limited. Since diamond growth depends upon the flux of atomic H to the substrate, these results suggest that under the conditions examined here, a low atomic H flux to the substrate poses an upper limit on the attainable diamond growth rate.

Type
Articles
Information
Journal of Materials Research , Volume 11 , Issue 3 , March 1996 , pp. 694 - 702
Copyright
Copyright © Materials Research Society 1996

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References

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