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Nucleation of an intermetallic at thin-film interfaces: VSi2 contrasted with Al3Ni

Published online by Cambridge University Press:  31 January 2011

E. Ma ,
L.A. Clevenger  and
C.V. Thompson
E. Ma
Affiliation:
The University of Michigan, Ann Arbor, Michigan 48109-2104
L.A. Clevenger
Affiliation:
IBM T.J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598
C.V. Thompson
Affiliation:
Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139
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Abstract

We analyze the formation of VSi2 at the amorphous-vanadium-silicide/amorphous-Si interface by linear-heating and isothermal calorimetry, and cross-sectional transmission electron microscopy. We show evidence that indicates sporadic VSi2 nucleation with a steady-state nucleation rate after a transient period. The results are contrasted with those obtained for Al2Ni nucleating at the polycrystalline-Al/polycrystalline-Ni interface, where the kinetics appears to be controlled by growth of a fixed number of nuclei at quickly consumed preferred nucleation sites.

Type
Articles
Information
Journal of Materials Research , Volume 7 , Issue 6 , June 1992 , pp. 1350 - 1355
Copyright
Copyright © Materials Research Society 1992

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