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Nucleation and growth of diamond on carbon-implanted single crystal copper surfaces

Published online by Cambridge University Press:  31 January 2011

T.P. Ong ,
Fulin Xiong ,
R.P.H. Chang  and
C.W. White
T.P. Ong*
Affiliation:
Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208
Fulin Xiong
Affiliation:
Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208
R.P.H. Chang
Affiliation:
Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208
C.W. White
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831
*
a)Present address: Jet Propulsion Laboratory, California Institute of Technology, 4800 Oak Grove Drive, M/S 303-308, Pasadena, California 91109-8099.
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Abstract

The nucleation and growth of diamond crystals on single crystal copper surfaces has been studied. Microwave plasma enhanced chemical vapor deposition (MPECVD) was used for diamond nucleation and growth. Prior to diamond nucleation, the single crystal copper surface is modified by carbon ion implantation at an elevated temperature (∊820 °C). This procedure leads to the formation of a graphite film on the copper surface, resulting in an enhancement of diamond crystallite nucleation. A simple lattice model has been constructed to describe the mechanism of diamond nucleation on graphite as 〈111〉diamond parallel to 〈0001〉graphite and 〈110〉diamond parallel to 〈11$\overline 1$0〉graphite. This leads to a good understanding of diamond growth on carbon-implanted copper surfaces.

Type
Articles
Information
Journal of Materials Research , Volume 7 , Issue 9 , September 1992 , pp. 2429 - 2439
Copyright
Copyright © Materials Research Society 1992

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