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Multivariable study on homoepitaxial diamond growth using isotopically enriched carbon-13 gas mixtures

Published online by Cambridge University Press:  31 January 2011

Gopi K. Samudrala  and
Yogesh K. Vohra
Yogesh K. Vohra*
Affiliation:
Department of Physics, University of Alabama at Birmingham, Birmingham, Alabama 35294-1170
*
a) Address all correspondence to this author.e-mail: [email protected]
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Abstract

We report our observations on the homoepitaxial diamond growth by microwave plasma chemical vapor deposition (MPCVD) experiments on Type Ib diamond substrates conducted by varying three independent variables. In a feed gas mixture of H2, N2, O2, and 13CH4, the amount of nitrogen was varied in the range of 0 to 4000 ppm, the amount of methane was varied from 2% CH4/H2 to 6% CH4/H2, and the substrate temperature was varied in the range of 850 to 1200 °C. We used isotopically enriched carbon-13 methane gas as the source of carbon in the plasma to clearly distinguish the grown diamond layer from the underlying substrate using Raman spectroscopy. The x-ray rocking curve measurements confirmed the homoepitaxial nature of the deposited layers with a slight increase in the full width at half-maximum for sample grown with the highest nitrogen content in the plasma. Optical and atomic force microscopy revealed dramatic changes in surface morphology with variation in each parameter. The nitrogen incorporation in carbon-13 diamond layers was monitored through photoluminescence spectroscopy of nitrogen–vacancy complexes. A twentyfold increase in diamond growth rate was clearly achieved in this multivariable study.

Keywords

Chemical vapor deposition (CVD) (deposition)DiamondEpitaxy
Type
Articles
Information
Journal of Materials Research , Volume 24 , Issue 2 , February 2009 , pp. 493 - 498
Copyright
Copyright © Materials Research Society 2009

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References

REFERENCES

1.Vavilov, V.S.: Diamond in solid state electronics. Phys.-Usp. 40, (1)15 (1997)CrossRefGoogle Scholar
2.Yan, C.S., Vohra, Y.K., Mao, H.K., Hemley, R.J.: Very high growth rate chemical vapor deposition of single-crystal diamond. Proc. Natl. Acad. Sci. USA 99, 12523 (2002)CrossRefGoogle ScholarPubMed
3.Yan, C.S., Vohra, Y.K.: Multiple twinning and nitrogen defect center in chemical vapor deposited homoepitaxial diamond. Diamond Relat. Mater. 8, 2022 (1999)CrossRefGoogle Scholar
4.Chayahara, A., Mokuno, Y., Horino, Y., Takasu, Y., Kato, H., Yoshikawa, H., Fujimori, N.: The effect of nitrogen addition during high-rate homoepitaxial growth of diamond by microwave plasma CVD. Diamond Relat. Mater. 13, 1954 (2004)CrossRefGoogle Scholar
5.Cao, G.Z., Schermer, J.J., van Enckevort, W.J.P., Elst, W.A.L.M., Giling, L.J.: Growth of {100} textured diamond films by addition of nitrogen. J. Appl. Phys. 79, 1357 (1996)CrossRefGoogle Scholar
6.Tallaire, A., Achard, J., Silva, F., Sussmann, R.S., Gicquel, A.: Homoepitaxial deposition of high-quality thick diamond films: Effect of growth parameters. Diamond Relat. Mater. 14, 249 (2005)CrossRefGoogle Scholar
7.Tallaire, A., Collins, A.T., Charles, D., Achard, J., Sussmann, R., Gicquel, A., Newton, M.E., Edmonds, A.M., Cruddace, R.J.: Characterisation of high-quality thick single-crystal diamond grown by CVD with a low nitrogen addition. Diamond Relat. Mater. 15, 1700 (2006)CrossRefGoogle Scholar
8.Achard, J., Silva, F., Brinza, O., Tallaire, A., Gicquel, A.: Coupled effect of nitrogen addition and surface temperature on the morphology and the kinetics of thick CVD diamond single crystals. Diamond Relat. Mater. 16, 685 (2007)CrossRefGoogle Scholar
9.Mokuno, Y., Chayahara, A., Yamada, H.: Synthesis of large single crystal diamond plates by high rate homoepitaxial growth using microwave plasma CVD and lift-off process. Diamond Relat. Mater. 17, 415 (2008)CrossRefGoogle Scholar
10.Qiu, W., Baker, P.A., Velisavljevic, N., Vohra, Y.K., Weir, S.T.: Calibration of an isotopically enriched carbon-13 layer pressure sensor to 156 GPa in a diamond anvil cell. J. Appl. Phys. 99, 064906 (2006)CrossRefGoogle Scholar
11.Qiu, W., Vohra, Y.K., Weir, S.T.: Role of nitrogen in the homoepitaxial growth on diamond anvils by microwave plasma chemical vapor deposition. J. Mater. Res. 22, 1112 (2007)CrossRefGoogle Scholar
12.Samudrala, G., Qiu, W., Catledge, S.A., Harrison, J.G., Vohra, Y.K., Weir, S.T.: Growth chemistry for the fabrication of designer diamonds for high pressure research. High Pressure Research 28, 1 (2008)CrossRefGoogle Scholar