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Misfit strain relaxations of (101)-oriented ferroelectric PbTiO3/(La, Sr)(Al, Ta)O3 thin film systems

Published online by Cambridge University Press:  28 December 2018

Yanpeng Feng ,
Yunlong Tang ,
Yinlian Zhu Open the ORCID record for Yinlian Zhu [Opens in a new window] ,
Minjie Zou  and
Xiuliang Ma
Yanpeng Feng
Affiliation:
Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China; and University of Chinese, Academy of Sciences, Beijing 100049, China
Yunlong Tang
Affiliation:
Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
Yinlian Zhu*
Affiliation:
Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
Minjie Zou
Affiliation:
Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China; and School of Material Science and Engineering, University of Science and Technology of China, Hefei 230026, China
Xiuliang Ma
Affiliation:
Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China; and State Key Lab of Advanced Processing and Recycling on Non-ferrous Metals, Lanzhou University of Technology, Lanzhou 730050, China
*
a)Address all correspondence to this author. e-mail: [email protected]
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Abstract

High-index ferroelectric thin films show excellent dielectricity, piezoelectricity and switching behaviors. Understanding the misfit strain relaxation behavior may prove beneficial to gaining insights into the high-quality growth of high-index ferroelectric films. In this study, ferroelectric PbTiO3 thin films were deposited on the (101)-oriented (La, Sr)(Al, Ta)O3 substrate by pulsed laser deposition and were investigated using (scanning) transmission electron microscopy. Two types of misfit dislocations with line directions of 〈111〉 and [010] were found at the interface. The 〈111〉 dislocation exhibited Burgers vectors of a[011] or $a\left[ {0\bar{1}1} \right]$, while the [010] dislocation featured Burgers vectors of $a\left[ {\bar{1}01} \right]$. The former might be generated by gliding, and the latter by climbing. We propose that the misfit strain relaxation in this film system basically results from the formation of dislocations and the residual misfit strain is relaxed via the formation of 90° ac domains.

Keywords

ferroelectric filmtransmission electron microscopymisfit strain relaxation
Type
Article
Information
Journal of Materials Research , Volume 33 , Issue 24 , 28 December 2018 , pp. 4156 - 4164
Copyright
Copyright © Materials Research Society 2018 

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