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Mechanical property and dislocation dynamics of GaAsP alloy semiconductor

Published online by Cambridge University Press:  31 January 2011

Ichiro Yonenaga ,
Koji Sumino ,
Gunzo Izawa ,
Hisao Watanabe  and
Junji Matsui
Ichiro Yonenaga
Affiliation:
Institute for Materials Research, Tohoku University, Sendai 980, Japan
Koji Sumino
Affiliation:
Institute for Materials Research, Tohoku University, Sendai 980, Japan
Gunzo Izawa
Affiliation:
Department of Chemistry, Faculty of Science, Tohoku University, Sendai 980, Japan
Hisao Watanabe
Affiliation:
Department of Chemistry, Faculty of Science, Tohoku University, Sendai 980, Japan
Junji Matsui
Affiliation:
NEC Corporation, Fundamental Research Laboratories, Kawasaki 213, Japan
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Abstract

The mechanical behavior of GaAsP alloy semiconductor was investigated by means of compressive deformation and compared with those of GaAs and GaP. The nature of collective motion of dislocations during deformation was determined by strain-rate cycling tests. The dynamic characteristics of dislocations in GaAsP were found to be similar to those in elemental and compound semiconductors such as Si, Ge, GaAs, and GaP. An alloy semiconductor has a component of the flow stress that is temperature-insensitive and is absent in compound semiconductors.

Type
Articles
Information
Journal of Materials Research , Volume 4 , Issue 2 , April 1989 , pp. 361 - 365
Copyright
Copyright © Materials Research Society 1989

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References

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