Hostname: page-component-586b7cd67f-t7czq Total loading time: 0 Render date: 2024-11-28T08:19:19.322Z Has data issue: false hasContentIssue false

Low-temperature synthesis of Zn3P2 nanowire

Published online by Cambridge University Press:  21 June 2011

In-Tae Bae*
Affiliation:
Small Scale Systems Integration and Packaging Center, State University of New York at Binghamton, Binghamton, New York 13902
Parag Vasekar
Affiliation:
Center for Autonomous Solar Power, State University of New York at Binghamton, Binghamton, New York 13902
Daniel VanHart
Affiliation:
Center for Autonomous Solar Power, State University of New York at Binghamton, Binghamton, New York 13902
Tara Dhakal
Affiliation:
Center for Autonomous Solar Power, State University of New York at Binghamton, Binghamton, New York 13902
*
a)Address all correspondence to this author. e-mail: [email protected]
Get access

Abstract

High-quality Zn3P2 nanowires are synthesized at a temperature as low as 350 °C using Zn foil and trioctylphosphine by chemical reflux method. Scanning electron microscopy and transmission electron microscopy (TEM) images show their diameters vary from ∼15 to 70 nm. Energy dispersive x-ray spectroscopy and nanobeam electron diffraction patterns in combination with structure factor simulation reveal that the nanowires have tetragonal α-Zn3P2 structure. Based on high-resolution TEM images and their fast Fourier transform patterns, Zn3P2 nanowires are considered to grow on a vicinity of the possibly highest surface energy plane of (101) with a growth direction parallel to [101].

Type
Materials Communications
Copyright
Copyright © Materials Research Society 2011

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Fagen, E.A.: Optical properties of Zn3P2. J. Appl. Phys. 50, 6505 (1979).CrossRefGoogle Scholar
2.Hermann, A.M., Madan, A., Wanlass, M.W., Badri, V., Ahrenkiel, R., Morrison, S., and Gonzalez, C.: MOCVD growth and properties of Zn3P2 and Cd3P2 films for thermal photovoltaic applications. Sol. Energy Mater. Sol. Cells 82, 241 (2004).CrossRefGoogle Scholar
3.Yang, R., Chueh, Y.-L., Morber, J.R., Snyder, R., Chou, L.-J., and Wang, Z.L.: Single-crystalline branched zinc phosphide nanostructures: Synthesis, properties, and optoelectronic devices. Nano Lett. 7, 269 (2007).CrossRefGoogle ScholarPubMed
4.Fessenden, R.W., Sobhanadri, J., and Subramanian, V.: Minority-carrier lifetime in thin-films of Zn3P2 using microwave and optical transient measurements. Thin Solid Films 266, 176 (1995).CrossRefGoogle Scholar
5.Kakishita, K., Aihara, K., and Suda, T.: Zinc phosphide epitaxial-growth by photo-MOCVD. Appl. Surf. Sci. 80, 281 (1994).CrossRefGoogle Scholar
6.Misiewicz, J., Bryja, L., Jezierski, K., Szatkowski, J., Mirowska, N., Gumienny, Z., and Placzekpopko, E.: Zn3P2-a new material for optoelectronic devices. Microelectron. J. 25, R23 (1994).CrossRefGoogle Scholar
7.Bichat, M.P., Monconduit, L., Pascal, J.L., and Favier, F.: Anode materials for lithium ion batteries in the Li-Zn-P system. Ionics 11, 66 (2005).CrossRefGoogle Scholar
8.Kishore, M.V.V.M.S. and Varadaraju, U.V.: Electrochemical reaction of lithium with Zn3P2. J. Power Sources 144, 204 (2005).CrossRefGoogle Scholar
9.Shen, G.Z., Bando, Y., Hu, J.Q., and Goldberg, D.: Single-crystalline trumpetlike zinc phosphide nanostructures. Appl. Phys. Lett. 88, 143105 (2006).CrossRefGoogle Scholar
10.Shen, G., Bando, Y., Ye, C., Yuan, X., Sekiguchi, T., and Goldberg, D.: Single-crystal nanotubes of II3-V2 semiconductors. Angew. Chem. Int. Ed. 45, 7568 (2006).CrossRefGoogle ScholarPubMed
11.Shen, G., Chen, P.-C., Bando, Y., Goldberg, D., and Zhou, C.: Bicrystalline Zn3P2 and Cd3P2 nanobelts and their electronic transport properties. Chem. Mater. 20, 7319 (2008).CrossRefGoogle Scholar
12.Liu, C., Dai, L., Ma, R.M., Yang, W.Q., and Qin, G.G.: P-Zn3P2 single nanowire metal-semiconductor field-effect transistors. J. Appl. Phys. 104, 034302 (2008).CrossRefGoogle Scholar
13.Liu, C., Dai, L., You, L.P., Xu, W.J., Ma, R.M., Yang, W.Q., Zhang, Y.F., and Qin, G.G.: Synthesis of high quality p-type Zn3P2 nanowires and their application in MISFETs. J. Mater. Chem. 18, 3912 (2008).CrossRefGoogle Scholar
14.Shen, G., Chen, P.-C., Bando, Y., Goldberg, D., and Zhou, C.: Single-crystalline and twinned Zn3P2 nanowires: Synthesis, characterization, and electronic properties. J. Phys. Chem. C 112, 16405 (2008).CrossRefGoogle Scholar
15.Williams, D.B. and Carter, C.B.: Transmission Electron Microscopy (Plenum, New York, 1996, Chap. 18).CrossRefGoogle Scholar
16.Chen, J.-H., Tai, M.-F., and Chi, K.-M.: Catalytic synthesis, characterization and magnetic properties of iron phosphide nanowires. J. Mater. Chem. 14, 296 (2004).CrossRefGoogle Scholar
17.Khanna, P.K., Jun, K.-W., Hong, K.B., Baeg, J.-O., and Mehrotra, G.K.: Synthesis of indium phosphide nanoparticles via catalytic cleavage of phosphorus carbon bond in n-trioctylphosphine by indium. Mater. Chem. Phys. 92, 54 (2005).CrossRefGoogle Scholar
18.Henkes, A.E., Vasquez, Y., and Schaak, R.E.: Converting metals into phosphides: A general strategy for the synthesis of metal phosphide nanocrystals. J. Am. Chem. Soc. 129, 1896 (2007).CrossRefGoogle ScholarPubMed
19.Henkes, A.E. and Schaak, R.E.: Trioctylphosphine: A general phosphorus source for the low-temperature conversion of metals into metal phosphides. Chem. Mater. 19, 4234 (2007).CrossRefGoogle Scholar
20.Shen, G., Ye, C., Goldberg, D., Hu, J., and Bando, Y.: Structure and cathodluminescence of hierarchical Zn3P2/ZnS nanotube/nanowire heterostructures. Appl. Phys. Lett. 90, 073115 (2007).CrossRefGoogle Scholar
21.Hayami, W. and Otani, S.: Surface energy and growth mechanism of β-tetragonal boron crystal. J. Phys. Chem. C 111, 10394 (2007).CrossRefGoogle Scholar