Hostname: page-component-586b7cd67f-rdxmf Total loading time: 0 Render date: 2024-11-28T01:07:22.146Z Has data issue: false hasContentIssue false

Low-temperature sintering of PNW–PMN–PZT piezoelectric ceramics

Published online by Cambridge University Press:  31 January 2011

Pengxian Lu*
Affiliation:
College of Materials Science and Engineering, Henan University of Technology, Zhengzhou 450007, China
Mankang Zhu
Affiliation:
College of Materials Science and Engineering, Beijing University of Technology, Beijing 100022, China
Dehe Xu
Affiliation:
Survey College of Information Engineering University, Zhengzhou 450052, China
Wenjun Zou
Affiliation:
College of Materials Science and Engineering, Henan University of Technology, Zhengzhou 450007, China
Zhengxin Li
Affiliation:
College of Materials Science and Engineering, Henan University of Technology, Zhengzhou 450007, China
Chunhua Wang
Affiliation:
College of Materials Science and Engineering, Henan University of Technology, Zhengzhou 450007, China
*
a)Address all correspondence to this author. e-mail: [email protected]
Get access

Abstract

For low-temperature firing of Pb0.94Sr0.06(Ni1/2W1/2)0.02(Mn1/3Nb2/3)0.07(Zr0.51Ti0.49)0.91O3 (PNW–PMN–PZT) system, BiFeO3 is selected as the sintering agent. In this study, the effects of BiFeO3 addition and sintering temperature on the microstructures and piezoelectric properties of the ceramics were investigated in detail. The ceramic with 10 mol% BiFeO3 sintered at 950 °C possesses optimal microstructure and piezoelectric properties. However, with the increase of sintering temperature the lower relative density, abnormal grain growth, and secondary phase accumulated at grain boundaries are observed, which deteriorates the piezoelectric properties. For the ceramics with different BiFeO3 addition sintered at 950 °C, the densification process and the grain growth are improved by suitable BiFeO3, while the morphotropic phase boundary (MPB) moving to the Ti-rich direction and the shrinkage of crystal cell occur. However, extra BiFeO3 inhabits the grain growth and introduces more cavities into the materials. Because of the microstructural changes that accompany the addition of BiFeO3 and the resulting decrease in sintering temperature, the maximum values of the piezoelectric properties are attained. By doping with 10 mol% BiFeO3, the sintering temperature of the PNW–PMN–PZT system can be lowered successfully from 1200 to 950 °C, while the excellent electric properties are kept.

Type
Articles
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1Duan, Z.Y.Wang, Q.K.: Development of a novel high precision piezoelectric linear stepper actuator. Sens. Actuators, A 285, 118 2005Google Scholar
2Hu, J.H.Chan, H.L.W.: A ring-shaped piezoelectric transformer operating in the third symmetric extensional vibration mode. Sens. Actuators, A 79, 88 2001Google Scholar
3Wong, N.Y., Zhang, Y., Helen, C., Wah, L.Choy, C.L.: A bilayer piezoelectric transformer operating in a bending vibration mode. Mater. Sci. Eng., B 164, 99 2003Google Scholar
4Schonecker, A., Gesemann, H.J.Seffner, L. Low-sintering PZT-ceramics for advanced actuators. Ferroelectrics, (ISAF1996, Proc. IEEE Int. Symp., 1, 1996), p. 263.CrossRefGoogle Scholar
5Ringgaard, E., Nielsen, E.R.Wolny, W.W.: Optimisation of new liquid-phase sintering aid for PZT. Applications of Ferroelectrics, (ISAF2000, Proc. IEEE Int. Symp., 1, 2000), p. 451.Google Scholar
6Corker, D.L., Whatmore, R.W., Ringgaard, E.Wolny, W.W.: Liquid-phase Sintering of PZT ceramics. J. Eur. Ceram. Soc. 2039, 20 2000Google Scholar
7Yoo, J., Lee, Y.Yoon, K.: Microstructure, electrical properties and temperature stability of resonant frequency in Pb(Ni1/2W1/2) O3–Pb(Mn1/3Nb2/3)O3–Pb(Zr0.51Ti0.49)O3 ceramics for high-power piezoelectric transformer. Jpn. J. Appl. Phys. 3256, 40 2001Google Scholar
8Yoo, J., Yoon, K., Hwang, S., Suh, S., Kim, J.Yoo, C.: Electrical characteristics of high power piezoelectric transformer for 28 W fluorescent lamp. Sens. Actuators, A 90, 132 2001CrossRefGoogle Scholar
9Hwang, L., Yoo, J.Y., Jang, E.S., Oh, D., Jeong, Y., Ahn, I.Cho, M.: Fabrication and characteristics of PDA LCD backlight driving circuits using piezoelectric transformer. Sens. Actuators, A 115, 73 2004CrossRefGoogle Scholar
10Yao, K., He, X.J., Xu, Y.Chen, M.M.: Screen-printed piezoelectric ceramic thick films with sintering additives introduced through a liquid-phase approach. Sens. Actuators, A 342, 118 2005Google Scholar
11Saha, D., Sen, A.Maiti, H.S.: Low temperature liquid phase sintering of lead magnesium niobate. Ceram. Int. 145, 25 1999Google Scholar
12Nielsen, E.R., Ringgaard, E.Kosec, M.: Liquid-phase sintering of Pb(Zr,Ti)O3 using PbO–WO3 additive. J. Eur. Ceram. Soc. 1847, 22 2002Google Scholar
13Kaneko, S., Dong, D.Murakami, E.: Effect of simultaneous addition of BiFeO3 and Ba(Cu0.5W0.5)O3 on lowering of sintering temperature of Pb(Zr,Ti)O3 ceramics. J. Am. Ceram. Soc. 1013, 81 1998Google Scholar
14Murakami, K., Mabuchi, D., Kurita, T., Niwa, Y.Kaneko, S.: Effects of adding various metal oxides on low-temperature sintered Pb(Zr,Ti)O3 ceramics. Jpn. J. Appl. Phys. 5188, 35 1996Google Scholar
15Chu, S.Y.Hsieh, C.S.: Doping effects on the piezoelectric properties of low-temperature sintered PNN–PZT based ceramics. J. Mater. Sci. Lett. 609, 19 2000Google Scholar
16Chu, S.Y.Chen, C.H.: Effects of dopants on the piezoelectric and dielectric properties of Sm-modified PbTiO3 ceramics. J. Mater. Res. B 2317, 35 2000Google Scholar
17Murakami, K., Niwal, Y.Kurita, T.: Low-temperature sintering of Nb2O5-added Pb(Zr,Ti)O3 ceramics. Applications of Ferroelectrics, (ISAF1998, Proc. IEEE Int. Symp., 11, 1998), p. 555.Google Scholar
18Lu, P.W., Xue, W.R.Huebner, W.: A study of the sintering mechanism of PZT-based piezoceramics. Applications of Ferroelectrics, (ISAF1995, Proc. IEEE Int. Symp. 9, 1994), p. 122.Google Scholar
19Kaneko, S., Murakami, K., Mabuchi, D., Kurita, T.Niwa, Y.: Effects of the additions of various metal oxides on the low temperature sintering and the electrical properties of Pb(Zr,Ti)O3 ceramics. Ferroelectrics, (ISAF1996, Proc. IEEE Int. Symp. Appl., 2, 1996) p. 727Google Scholar
20Yamamoto, H., Funakubo, H., Shinozaki, K.Mizutani, N.: Grain boundary structure of Bi2O3-diffused BaTiO3 BL capacitor. J. Ceram. Soc. Jpn. 1266, 100 1992Google Scholar
21Fabes, B.D.Poisl, W.H.: Processing of glass-ceramics from lunar resources. Space Manufacturing 8—Energy and Materials from Space, (Proc. 10th Princeton/AIAA/SSI Conf. 27 1991), p. 352Google Scholar
22Zhou, L.J., Zimmermann, A.Zeng, Y.P.: Effects of PbO content on the sintering behavior, microstructure, and properties of La-doped PZST antiferroelectric ceramics. J. Mater. Sci.: Mater. Electron. 145, 15 2004Google Scholar
23Wang, X.X., Murakami, K., Sugiyama, O.Kaneko, S.: Piezoelectric properties, densification behavior and microstructural evolution of low temperature sintered PZT ceramics with sintering aids. J. Eur. Ceram. Soc. 1367, 21 2001Google Scholar
24Wang, C.H.: The microstructure and characteristics of 0.875PZT– 0.125PMN ceramics with addition of Pb-based flux. J. Eur. Ceram. Soc. 2033, 22 2002Google Scholar
25Hayashi, T., Inoue, T.Akiyama, Y.: Low temperature sintering of PZT powders coated with Pb5Ge3O11 by sol-gel method. J. Eur. Ceram. Soc. 999, 19 1999Google Scholar
26Murakami, K., Okada, N.Dong, D.: Behavior of morphotropic phase boundary and microstructure of low-temperature sintered PZT ceramics with BiFeO3 and Ba(Cu,W)O3. Jpn. J. Appl. Phys. 5529, 33 1994Google Scholar
27Cheng, J.R.Cross, L.E.: Modified BiFeO3-PbTiO3 morphotropic phase boundary (MPB) piezoelectric ceramics for high temperature and high-power applications in Materials and Devices for Smart Systems, edited by Y. Furuya, E. Quandt, Q. Zhang, K. Inoue, and M. Shahinpoor (Mater. Res. Soc., Symp. Proc. 785, Warrendale, PA (2004), D4.2, p. 87Google Scholar