Hostname: page-component-586b7cd67f-2brh9 Total loading time: 0 Render date: 2024-11-24T18:48:41.475Z Has data issue: false hasContentIssue false
  • English
  • Français

Low temperature sintering of nano-SiC using a novel Al8B4C7 additive

Published online by Cambridge University Press:  31 January 2011

Sea-Hoon Lee ,
Byung-Nam Kim  and
Hidehiko Tanaka
Sea-Hoon Lee*
Affiliation:
Korea Institute of Materials Science, Changwon, Gyeongnam, 641-831 Republic of Korea
Byung-Nam Kim
Affiliation:
National Institute for Materials Science, Tsukuba, Ibaraki, 305-0047 Japan
Hidehiko Tanaka
Affiliation:
National Institute for Materials Science, Tsukuba, Ibaraki, 305-0044 Japan
*
a)Address all correspondence to this author. e-mail: [email protected]
Get access

Abstract

Al8B4C7 was used as a sintering additive for the densification of nano-SiC powder. The average grain size was approximately 70 nm after sintering SiC-12.5wt% Al8B4C7 at 1550 °C. The densification rate strongly depended on the sintering temperature and the applied pressure. The rearrangement of SiC particles occurred at the initial shrinkage, while viscous flow and liquid phase sintering became important at the middle and final stage of densification.

Keywords

CeramicNanostructureSintering
Type
Articles
Information
Journal of Materials Research , Volume 25 , Issue 3 , March 2010 , pp. 471 - 475
Copyright
Copyright © Materials Research Society 2010

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Gubernat, A., Stobierski, L., Labaj, P.Microstructure and mechanical properties of silicon carbide pressureless sintered with oxide additives. J. Eur. Ceram. Soc. 27, 781 (2007)Google Scholar
2.Lee, Y.I., Kim, Y.W., Mitomo, M.Effect of processing on densification of nanostructured SiC ceramics fabricated by two-step sintering. J. Mater. Sci. 39, 3801 (2004)CrossRefGoogle Scholar
3.Telle, R.Boride and carbide ceramics , in Materials Science and Technology Vol. 11 edited by M.V. Swain (VCH, Weinheim, Germany 1994)Google Scholar
4.Wang, T., Yamaguchi, A.Synthesis of Al8B4C7 and its oxidation properties in air. J. Ceram. Soc. Jpn. 108, 375 (2000)Google Scholar
5.Ruska, J., Gauckler, L.J., Lorenz, J., Rexer, H.U.The quantitative calculation of SiC polytypes from measurements of x-ray diffraction peak intensities. J. Mater. Sci. 14, 2013 (1979)CrossRefGoogle Scholar
6.Standard test methods for determining average grain size , in Annual Book of ASTM Standards 2000, ASTM E 112-96 (ASTM, West Conshohocken, PA 2000)Google Scholar
7.Daulton, T.L., Bernatowicz, T.J., Lewis, R.S., Messenger, S., Stadermann, F.J., Amari, S.Polytype distribution of circumstellar silicon carbide: Microstructural characterization by transmission electron microscopy. Geochim. Cosmochim. Acta 67, 4743 (2003)Google Scholar
8.Tanaka, H., Hirosaki, N., Nishimura, T., Shin, D.W., Park, S.S.Nonequiaxial grain growth and polytype transformation of sintered α-silicon carbide and β-silicon carbide. J. Am. Ceram. Soc. 86, 2222 (2003)Google Scholar
9.Yoshimura, H.N., Da Cruz, A.C., Zhou, Y., Tanaka, H.Sintering of 6H(α)-SiC and 3C(β)-SiC powders with B4C and C additives. J. Mater. Sci. 37, 1541 (2002)Google Scholar
10.Liu, J., German, R.M.Rearrangement densification in liquid-phase sintering. Metall. Mater. Trans. A 32, 3125 (2001)CrossRefGoogle Scholar
11.Salamon, D., Shen, Z., Sajgalik, P.Rapid formation of α-sialon during spark plasma sintering: Its origin and implications. J. Eur. Ceram. Soc. 27, 2541 (2007)Google Scholar
12.Kim, Y.W., Mitomo, M., Zhan, G.D.Microstructural control of liquid-phase sintered β-SiC by seeding. J. Mater. Sci. Lett. 20, 2217 (2001)Google Scholar
13.German, R.M.Sintering Theory and Practice (John Wiley & Sons, Inc, New York 1996)Google Scholar
14.Kang, S.J.L.Sintering-Densification, Grain Growth and Microstructure (Elsevier Butterworth-Heinmann, Oxford, UK 2005)Google Scholar
15.Chaim, R.Densification mechanisms in spark plasma sintering of nanocrystalline ceramics. Mater. Sci. Eng., A 443, 25 (2007)Google Scholar
16.Wang, T., Yamaguchi, A.Some properties of sintered Al8B4C7. J. Mater. Sci. Lett. 19, 1045 (2000)Google Scholar
17.Lee, S.H., Sakka, Y., Tanaka, H., Sakka, Y.Wet processing and low temperature pressureless sintering of SiC using a novel Al3BC3 sintering additive. J. Am. Ceram. Soc. 92, 2888 (2009)CrossRefGoogle Scholar
18.Phase Diagrams for Ceramists Vol. 1 edited by E.M. Levin, C.R. Robbins, and H.F. McMurdie (The American Ceramic Society, Columbus, OH 1964)Google Scholar
19.Rahaman, M.N., De Jonghe, L.C., Scherer, G.W., Brook, R.J.Creep and densification during sintering of glass powder compacts. J. Am. Ceram. Soc. 70, 766 (1987)Google Scholar
20.Shen, Z.J., Peng, H., Nygren, M.Formidable increase in the superplasticity of ceramics in the presence of an electric field. Adv. Mater. 15, 1006 (2003)Google Scholar
21.Sigl, L.S., Kleebe, H.J.Core/rim structure of liquid-phase sintered silicon carbide. J. Am. Ceram. Soc. 76, 773 (1993)Google Scholar
22.Zhang, X.F., Yang, Q., De Jonghe, L.C.Microstructure development in hot-pressed silicon carbide: Effects of aluminum, boron, and carbon additive. Acta Mater. 51, 3849 (2003)CrossRefGoogle Scholar
23.Clarke, D.R.On the equilibrium thickness of intergranular glass phases in ceramic materials. J. Am. Ceram. Soc. 70, 15 (1987)Google Scholar