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Linear growth of Ni2Si thin film on n+/p junction at low temperature

Published online by Cambridge University Press:  03 March 2011

Yu-Long Jiang ,
Guo-Ping Ru ,
Xin-Ping Qu ,
Bing-Zong Li ,
Christophe Detavernier  and
R.L. Van Meirhaeghe
Yu-Long Jiang*
Affiliation:
Department of Microelectronics, Fudan University, Shanghai 200433, China
Guo-Ping Ru
Affiliation:
Department of Microelectronics, Fudan University, Shanghai 200433, China
Xin-Ping Qu
Affiliation:
Department of Microelectronics, Fudan University, Shanghai 200433, China
Bing-Zong Li
Affiliation:
Department of Microelectronics, Fudan University, Shanghai 200433, China
Christophe Detavernier
Affiliation:
Department of Solid State Science, Ghent University, Krijgslaan 281/S1, B-9000 Ghent, Belgium
R.L. Van Meirhaeghe
Affiliation:
Department of Solid State Science, Ghent University, Krijgslaan 281/S1, B-9000 Ghent, Belgium
*
a) Address all correspondence to this author. e-mail: [email protected]
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Abstract

Nickel mono-silicide has been considered a promising silicide candidate for sub-90 nm nodes of integrated circuits manufacturing. To form high-quality nickel mono-silicide as source/drain contact electrodes, a two-step low temperature rapid thermal process has been proposed, in which the as-deposited Ni will react with silicon during a low temperature (<310 °C) first anneal. Due to the lower annealing temperature Ni2Si will form after the first anneal. To better control the silicidation process the growth kinetics of Ni2Si thin film fabricated by solid-state reaction of sputtered Ni thin film on n+/p junction at low temperature is investigated in this paper. It is demonstrated that between 260 and 280 °C the thickness of Ni2Si thin film has a linear rather than parabolic dependence on annealing time. The corresponding activation energy for this linear growth is found to be ∼1.35 eV.

Keywords

KineticsMicroelectronicsNucleation & growth
Type
Articles
Information
Journal of Materials Research , Volume 21 , Issue 12 , December 2006 , pp. 3017 - 3021
Copyright
Copyright © Materials Research Society 2006

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References

REFERENCES

1.Murarka, S.P.: Refractory silicides for integrated-circuits. J. Vac. Sci. Technol. 17, 775 (1980).CrossRefGoogle Scholar
2.Gambino, J.P., Colgan, E.G.: Silicides and ohmic contacts. Mater. Chem. Phys. 52, 99 (1998).CrossRefGoogle Scholar
3.Kittl, J.A., Hong, Q.Z.: Self-aligned Ti and Co silicides for high performance sub-0.18 um CMOS technologies. Thin Solid Films 320, 110 (1998).CrossRefGoogle Scholar
4.Lu, J.P., Miles, D., Zhao, J., Gurba, A., Xu, Y., Lin, C., Hewson, M., Ruan, J., Tsung, L., Kuan, R., Grider, T., Mercer, D., Montgomery, C. A novel nickel SALICIDE process technology for CMOS devices with sub-40 nm physical gate length. (IEEE IEDM Tech. Dig., San Francisco, CA, 2002), p. 371.Google Scholar
5.Morimoto, T., Ohguro, T., Momose, H., Iinuma, T., Kunishima, I., Suguro, K., Katakabe, I., Nakajima, H., Tsuchiaki, M., Ono, M., Katsumata, Y., Iwai, H.: Self-aligned nickel mono-silicide technology for high-speed deep-submicron logic CMOS ULSI. IEEE Trans. Electron Devices 42, 915 (1995).Google Scholar
6.Lauwers, A., Steegen, A., de Potter, M., Lindsay, R., Satta, A., Bender, H., Maex, K.: Materials aspects, electrical performance, and scalability of Ni silicide towards sub-0.13 um technologies. J. Vac. Sci. Technol., B 19, 2026 (2001).CrossRefGoogle Scholar
7.Zheng, L.R.: Lateral diffusion of Ni and Si through Ni2Si in Ni/Si couples. Appl. Phys. Lett. 41, 646 (1982).Google Scholar
8.d’Heurle, F., Petersson, C.S., Baglin, J.E.E., Placa, S.J. La, Wong, C.Y.: Formation of thin films of NiSi: Metastable structure, diffusion mechanisms in intermetallic compounds. J. Appl. Phys. 55, 4208 (1984).Google Scholar
9.Gas, P., d’Heurle, F.M. Kinetics of formation of TM silicide thin films: Self-diffusion, in Properties of Metal Silicides edited by Maex, K. and van Rossum, M., (INSPEC, London, 1995), p. 279.Google Scholar
10.Deal, B.E., Grove, A.S.: General relationship for the thermal oxidation of silicon. J. Appl. Phys. 36, 3770 (1965).Google Scholar
11.Camacho, J.M., Oliva, A.I.: Morphology and electrical resistivity of metallic nanostructures. Microelectron. J. 36, 555 (2005).Google Scholar