Hostname: page-component-586b7cd67f-rdxmf Total loading time: 0 Render date: 2024-11-23T18:41:39.694Z Has data issue: false hasContentIssue false
  • English
  • Français

A large angle convergent beam electron diffraction study of the core nature of dislocations in 3C-SiC

Published online by Cambridge University Press:  31 January 2011

X. J. Ning  and
P. Pirouz
X. J. Ning
Affiliation:
Department of Materials Science and Engineering, Case Western Reserve University, Cleveland, Ohio 44106–7204
P. Pirouz
Affiliation:
Department of Materials Science and Engineering, Case Western Reserve University, Cleveland, Ohio 44106–7204
Get access

Abstract

Dislocations produced by 1300 °C indentation of the silicon-terminated (111) face of 3C-SiC were investigated by transmission electron microscopy. They were all found to be either widely separated partial dislocation pairs, or else, arrays of single partial dislocation half-loops on neighboring parallel slip planes and having the same Burgers vector. It was concluded that in the latter case, each array consisted of leading partial dislocations which had nucleated without accompanying trailing partial dislocations. The core nature of both dissociated dislocations and arrays of single partial dislocations has been determined by the technique of large angle convergent beam electron diffraction. The results indicate that the core of all single partial dislocation half-loops constituting an array consists of silicon atoms. It is concluded that, with the present deformation geometry, the Si-core partial dislocations are preferentially nucleated before the C-core partial dislocations. In the case of a dissociated dislocation, when a pair of partials was present, electron microscopy observations revealed that the morphology of the two partial dislocations was very different; while the Si-core partials were smooth, the C-core partial dislocations had a zig-zag morphology.

Type
Articles
Information
Journal of Materials Research , Volume 11 , Issue 4 , April 1996 , pp. 884 - 894
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Pirouz, P. and Yang, J. W., Ultramicroscopy 51, 189–214 (1993).CrossRefGoogle Scholar
2.Ramsdell, L. S., Am. Mineral. 32, 64–82 (1947).Google Scholar
3.Amelinckx, S., Strumane, G., and Webb, W. W., J. Appl. Phys. 31, 1359–1370 (1960).CrossRefGoogle Scholar
4.Stevens, R., J. Mater. Sci. 5, 474–477 (1970).CrossRefGoogle Scholar
5.Stevens, R., J. Mater. Sci. 7, 517–521 (1972).CrossRefGoogle Scholar
6.Pilyankevich, A. N., Britun, V. F., and Kravets, V. A., Sov. Phys. Solid State 24, 862–863 (1982).Google Scholar
7.Pilyankevich, A. N. and Britun, V. F., Phys. Status Solidi A 82, 449–457 (1984).CrossRefGoogle Scholar
8.Maeda, K., Suzuki, K., Fujita, S., Ichihara, M., and Hyodo, S., Philos. Mag. A 57, 573–592 (1988).CrossRefGoogle Scholar
9.Yang, J. W., Ph.D. Thesis, Case Western Reserve University (1993).Google Scholar
10.Pirouz, P., in Twinning in Advanced Materials, edited by Yoo, M. H. and Wuttig, M. (The Minerals, Metals, and Materials Society, Warrendale, PA, 1994), pp. 275–295.Google Scholar
11.Alexander, H., Haasen, P., Labusch, R., and Schröter, W., Foreword to J. Phys. (Paris) 40, Colloque C6 (1979).Google Scholar
12.Pirouz, P., Yang, J. W., Powell, J. A., and Ernst, F., in Microscopy of Semiconducting Materials, edited by Cullis, A. G. and Long, N. J. (Inst. of Phys. Conf. Ser. 117, Bristol, 1991), pp. 149–154.Google Scholar
13.Sitch, P. K., Jones, R., Oberg, S., and Heggie, M. I., Phys. Rev. B 52, 4951–4955 (1995).CrossRefGoogle Scholar
14.Feuillet, G., M.Sc. Thesis, University of Oxford (1982).Google Scholar
15.Marukawa, K., Philos. Mag. A 40, 303–312 (1979).CrossRefGoogle Scholar
16.Cherns, D. and Preston, A. R., Proceedings of the XIth Int. Cong. on Electron Microscopy, Kyoto, 1986, edited by Imura, T., Marusa, S., and Suzuki, T. (Jpn. Soc. Electron Microscopy, Tokyo, Japan), Vol. 1, p. 721.Google Scholar
17.Wang, J., Steeds, J. W., and Woolf, D. A., Philos. Mag. A 65, 829–839 (1992).CrossRefGoogle Scholar
18.Chou, C. T., Preston, A. R., and Steeds, J.W., Philos Mag. A 65, 863–888 (1992).CrossRefGoogle Scholar
19.Ning, X. J. and Pirouz, P., in Proceedings of the 13th International Congress on Electron Microscopy, edited by Jouffrey, B. and Colliex, C. (Les Éditions de Physique 1, Paris, 1994), pp. 895–896.Google Scholar
20.Yang, J. W., Ning, X. J., and Pirouz, P., in Japan-US Workshop on Functional Fronts in Advanced Ceramics, edited by Yanagida, K. and Newnham, R. (Ceramic Society of Japan, Tsukuba, Japan, 1994), pp. 55–58.Google Scholar
21.Ning, X. J. and Pirouz, P., in Defect-Interface Interactions, edited by Kvam, E.P., King, A.H., Mills, M.J., Sands, T.D., and Vitek, V. (Mater. Res. Soc. Symp. Proc. 319, Pittsburgh, PA, 1994), pp. 441–456.Google Scholar
22.Hirth, J. P. and Lothe, J., Theory of Dislocations (McGraw-Hill, New York, 1968).Google Scholar
23. For a screw dislocation, the equivalent convention is to assume that b is positive when it is parallel to a left-handed dislocation.Google Scholar
24.Powell, J. A., Petit, J.B., Edgar, J.H., Yang, J.W., Pirouz, P., Choyke, W. J., Clemen, L., and Yoganathan, M., Appl. Phys. Lett. 59, 333–335 (1991).CrossRefGoogle Scholar
25. Cree Research, Inc., Durham, N.C.Google Scholar
26. QM High-Temperature Microhardness Tester, Nikon, Inc., Tokyo, Japan.Google Scholar
27.Tanaka, M., Terauchi, M., and Kaneyama, M., Convergent-Beam Electron Diffraction II (JEOL, Ltd., Kyoto, Japan, 1988).Google Scholar
28.Pirouz, P., Scripta Metall. 21, 1463–1468 (1987).CrossRefGoogle Scholar
29.Pirouz, P. and Hazzledine, P. M., Scripta Metall. Mater. 25, 1167–1172 (1991).CrossRefGoogle Scholar
30.Pirouz, P. and Ning, X. J. in Microscopy of Semiconducting Materials, edited by Cullis, A. G. and Staton-Bevan, A. (Inst. Phys. Conf. Ser. Bristol, 1995, in press).Google Scholar
31.Ning, X. J., Perez, T., and Pirouz, P., Philos. Mag. A 72, 837–859 (1995).CrossRefGoogle Scholar
32.Hirsch, P. B., Ourmazd, A., and Pirouz, P., in Microscopy of Semiconducting Materials, edited by Cullis, A. G. and Joy, D. C. (Inst. Phys. Conf. Ser. No. 60, Bristol, 1981), pp. 29–34.Google Scholar
33.Hon, M. H. and Davis, R. F., J. Mater. Sci. 14, 2411–2421 (1979).CrossRefGoogle Scholar
34.Hon, M. H. and Davis, R. F., J. Mater. Sci. 15, 2073–2080 (1980).CrossRefGoogle Scholar
35.Maeda, K., Suzuki, K., and Ichihara, M., Microsc. Microanal. Microstruct. 4, 211–220 (1993).CrossRefGoogle Scholar
36.Warren, P. D., Pirouz, P., and Roberts, S. G., Philos. Mag. A 50, L23–L28 (1984).Google Scholar
37.Hirsch, P. B., Pirouz, P., Roberts, S. G., and Warren, P. D., Philos. Mag. B 52, 759–784 (1985).CrossRefGoogle Scholar
38.Petroff, P. and Hartman, R. L., Appl. Phys. Lett. 23, 469–471 (1973).CrossRefGoogle Scholar
39.Maeda, K. and Takeuchi, S., in Dislocations in Solids, edited by Nabarro, F. R. N. and Duesbery, M. S. (North-Holland Publishing Co., Amsterdam, 1995), Vol. 10.Google Scholar
40.Heggie, M. and Jones, R., Philos. Mag. B 48, 365–377 (1983).CrossRefGoogle Scholar
41.Heggie, M. and Jones, R., Philos. Mag. B 48, 379–390 (1983).CrossRefGoogle Scholar