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Kinetically stable glassy phase formation in neodymium nickelate thin films as evidenced by Hall effect and electrical resistivity measurements

Published online by Cambridge University Press:  10 April 2013

Megan Campbell Prestgard
Affiliation:
Nanostructured Materials Research Laboratory, Department of Materials Science and Engineering, University of Utah, Salt Lake City, Utah 84112
Ashutosh Tiwari*
Affiliation:
Nanostructured Materials Research Laboratory, Department of Materials Science and Engineering, University of Utah, Salt Lake City, Utah 84112
*
a)Address all correspondence to this author. e-mail: [email protected]
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Abstract

In this study, we are reporting the time- and temperature-dependence of the electrical resistivity and temperature-dependence of the Hall voltage in neodymium nickelate thin films. The films were deposited on a lanthanum aluminate substrate [LaAlO3 (001)] by a pulsed laser deposition technique, with thicknesses ranging from 0.6 to 120 nm. Time-dependent electrical transport measurements indicated the formation of a kinetically stable metallic glassy phase rather than a stable insulating phase on cooling below the transition temperature, TM-I. Comparisons of the low-temperature behavior with that of common insulators further supported this claim. Hall effect measurements on the 1.2-nm sample showed a local maximum in the carrier concentration just below the TM-I on both the heating and cooling cycles. This again confirmed the proposed low-temperature structure, in that, for the 1.2-nm sample, there was a minimal degree of supercooling before transitioning to a kinetically stable glassy phase.

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Articles
Copyright
Copyright © Materials Research Society 2013 

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References

REFERENCES

Scheel, H.J. and Licci, F.: Crystal growth of YBa2Cu3O7-x. J. Cryst. Growth 85, 4 (1987).CrossRefGoogle Scholar
Catalan, G. and Scott, J.F.: Magnetoelectric coupling and multiferroic materials, in Multifunctional Oxide Heterostructures, 1st ed.; edited by E.Y. Tsymbal, R.A. Dagotto, C.B. Eom, and R. Ramesh (Oxford University Press, Oxford, UK, 2012), pp. 44, 46.Google Scholar
Rata, A.D., Kataev, V., Khomskii, D., and Hibma, T.: Giant positive magnetoresistance in metallic VOx thin films. Phys. Rev. B 68, 22 (2003).CrossRefGoogle Scholar
Jin, S., McCormack, M., Tiefel, T.H., and Ramesh, R.: Colossal magnetoresistance in La-Ca-Mn-O ferromagnetic thin films. J. Appl. Phys. 76, 10 (1994).CrossRefGoogle Scholar
Tiwari, A. and Rajeev, K.P.: Metal-insulator transition in La0.7Sr0.3Mn1-xFexO3. J. Appl. Phys. 86, 9 (1999).CrossRefGoogle Scholar
Vassiliou, J.K., Hornbostel, M., Ziebarth, R., and Disalvo, F.J.: Synthesis and properties of NdNiO3 prepared by low-temperature methods. J. Solid State Chem. 81, 2 (1989).CrossRefGoogle Scholar
Medarde, M., Fontaine, A., Garcia-Munoz, J.L., Rodriguez-Carvaial, J., de Santis, M., Sacchi, M., Rossi, G., and Lacorre, P.: RNiO3 perovskites (R=Pr, Nd): Nickel valence and the metal-insulator transition investigated by x-ray-absorption spectroscopy. Phys. Rev. B 46, 23 (1992).CrossRefGoogle ScholarPubMed
Adler, D. and Brooks, H.: Theory of semiconductor-to-metal transitions. Phys. Rev. 155, 3 (1967).Google Scholar
Torrance, J.B., Lacorre, P., Nazzal, A.I., Ansaldo, E.J., and Niedermayer, C.: Systematic study of insulator-metal transitions in perovskites RNiO3 (R=Pr, Nd, Sm, Eu) due to closing of the charge-transfer gap. Phys. Rev. B 45, 14 (1992).CrossRefGoogle ScholarPubMed
Dobin, A.Y., Nikolaev, K.R., Krivorotov, I.N., Wentzcovitch, R.M., Dahlberg, E.D., and Goldman, A.M.: Electronic and crystal structure of fully strained LaNiO3 films. Phys. Rev. B 68, 11 (2003).CrossRefGoogle Scholar
Garcia-Munoz, J.L., Rodriguez-Carvajal, J., Lacorre, P., and Torrance, J.B.: Neutron diffraction study of RNiO3 (R=La, Pr, Nd, Sm): Electronically induced structural changes across the metal-insulator transition. Phys. Rev. B 46, 8 (1992).CrossRefGoogle ScholarPubMed
Xiang, P.H., Asanuma, S., Yamada, H., Inoue, I.H., Akoh, H., and Sawa, A.: Room temperature Mott metal-insulator transition and its systematic control in Sm1-xCaxNiO3 thin films. Appl. Phys. Lett. 97, 3 (2010).CrossRefGoogle Scholar
Medarde, M., Mesot, J., Rosenkranz, S., Lacorre, P., Marshall, W., Klotz, S., Loveday, J.S., Hamel, G., Hull, S., and Radaelli, P.: Pressure-induced orthorhombic-rhombohedral phase transition in NdNiO3. Physica B 234236, 1517 (1997).CrossRefGoogle Scholar
Mallik, R., Sampathkumaran, E.V., Alonso, J.A., and Martinez-Lope, M.J.: Complex low-temperature transport behaviour of RNiO3-type compounds. J. Phys. Condens. Matter 10, 18 (1998).CrossRefGoogle Scholar
Granados, X., Fontcuberta, J., Obradors, X., Manosa, L., and Torrance, J.B.: Metallic state and the metal-insulator transition of NdNiO3. Phys. Rev. B 48, 16 (1993).CrossRefGoogle ScholarPubMed
Kaur, D., Jesudasan, J., and Raychaudhuri, P.: Pulsed laser deposition of NdNiO3 thin films. Solid State Commun. 136, 6 (2005).CrossRefGoogle Scholar
Kumar, D., Rajeev, K.P., Kushwaha, A.K., and Budhani, R.C.: Heterogeneous nucleation and metal-insulator transition in epitaxial films of NdNiO3. J. Appl. Phys. 108, 6 (2010).CrossRefGoogle Scholar
Tiwari, A., Narayan, J., Jin, C., and Kvit, A.: Growth of epitaxial NdNiO3 and integration with Si(100). Appl. Phys. Lett. 80, 8 (2002).CrossRefGoogle Scholar
Scherwitzl, R., Zubko, P., Lezama, I.G., Ono, S., Morpurgo, A.F., Catalan, G., and Triscone, J.M.: Electric-field control of the metal-insulator transition in ultrathin NdNiO3 films. Adv. Mater. 22, 48 (2010).CrossRefGoogle ScholarPubMed
Liu, J., Kareev, M., Gray, B., Kim, J.W., Ryan, P., Dabrowski, B., Freeland, J.W., and Chakhalian, J.: Strain-mediated metal-insulator transition in epitaxial ultrathin films of NdNiO3. Appl. Phys. Lett. 96, 23 (2010).CrossRefGoogle Scholar
Catalan, G., Bowman, R.M., and Gregg, J.M.: Metal-insulator transition in NdNiO3 thin films. Phys. Rev. B 62, 12 (2000).CrossRefGoogle Scholar
Blasco, J., Castro, M., and Garcia, J.: Structural, electronic, magnetic and calorimetric study of the metal-insulator transition in NdNiO3. J. Phys. Condens. Matter 6, 30 (1994).CrossRefGoogle Scholar
Lorenzo, J.E., Hodeau, J.L., Paolasini, L., Lefloch, S., Alonso, J.A., and Demazeau, G.: Resonant x-ray scattering experiments on electronic orderings in NdNiO3 single crystals. Phys. Rev. B 71, 4 (2005).CrossRefGoogle Scholar
Venimadhav, A., Lekshmi, I.C., and Hegde, M.S.: Strain-induced metallic behavior in PrNiO3 epitaxial thin films. Mater. Res. Bull. 37, 2 (2002).CrossRefGoogle Scholar
Mughrabi, H.: Dislocation clustering and long-range internal stresses in monotonically and cyclically deformed metal crystals. Rev. Phys. Appl. 23, 4 (1988).CrossRefGoogle Scholar
Kumar, D., Rajeev, K.P., Alonso, J.A., and Martinez-Lope, M.J.: Evidence of kinetically arrested supercooled phases in the perovskite oxide NdNiO3. J. Phys. Condens. Matter 21, 48 (2009).CrossRefGoogle ScholarPubMed
Kumar, D., Rajeev, K.P., Alonso, J.A., and Martinez-Lope, M.J.: Slow dynamics in hard condensed matter: A case study of the phase separating system NdNiO3. J. Phys. Condens. Matter 21, 18 (2009).CrossRefGoogle ScholarPubMed
Zhou, J.S., Goodenough, J.B., Dabrowski, B., Klamut, P.W., and Bukowski, Z.: Probing the metal-insulator transition in Ni(III)-oxide perovskites. Phys. Rev. B 61, 7 (2000).CrossRefGoogle Scholar