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Ion-beam induced disordering and onset of amorphization in spinel by defect accumulation

Published online by Cambridge University Press:  03 March 2011

N. Bordes ,
L.M. Wang ,
R.C. Ewing  and
K.E. Sickafus
N. Bordes
Affiliation:
Department of Earth and Planetary Sciences, University of New Mexico, Albuquerque, New Mexico 87131-1116
L.M. Wang
Affiliation:
Department of Earth and Planetary Sciences, University of New Mexico, Albuquerque, New Mexico 87131-1116
R.C. Ewing
Affiliation:
Department of Earth and Planetary Sciences, University of New Mexico, Albuquerque, New Mexico 87131-1116
K.E. Sickafus
Affiliation:
Los Alamos National Laboratory, MST-4, Los Alamos, New Mexico 87545
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Abstract

Ion-irradiation induces amorphization in many intermetallics and ceramics, but spinel (MgAl2O4) is considered a “radiation resistant” ceramic. Spinel was irradiated with 1.5 MeV Kr+ at 20 K and observed in situ by transmission electron microscopy (TEM). The spinel remained crystalline to a high dose of 1 × 1016 ions/cm2, without any evidence of amorphization. Another spinel was preimplanted with Ne (400 keV and 50 keV). The microstructure revealed a still crystalline material with 8 nm interstitial loops. After irradiation with 1.5 MeV Kr+ (20 K), amorphization, a result of cation disordering, initiated at a dose of 1.7 × 1015 ions/cm2. At a dose of 1 × 1016 ions/cm2, the spinel was partially amorphous and the remaining crystalline domains disordered. These results show that spinel can be disordered and that amorphization can be triggered by the introduction of stable defects, followed by ion irradiation at low temperature.

Type
Articles
Information
Journal of Materials Research , Volume 10 , Issue 4 , April 1995 , pp. 981 - 985
Copyright
Copyright © Materials Research Society 1995

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