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Influence of indium addition on electromigration behavior of solder joint

Published online by Cambridge University Press:  19 September 2011

Kiju Lee ,
Keun-Soo Kim  and
Katsuaki Suganuma
Kiju Lee*
Affiliation:
Graduate School of Engineering, Osaka University, Osaka 567-0047, Japan
Keun-Soo Kim
Affiliation:
Fusion Technology Lab., Hoseo University, Asan 336-795, Korea
Katsuaki Suganuma
Affiliation:
Institute of Science and Industrial Research, Osaka University, Osaka 567-0047, Japan
*
a)Address all correspondence to this author. e-mail: [email protected]
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Abstract

The electromigration (EM) behavior of the Cu/Sn–In/Cu solder model strip was investigated under the conditions of high electrical current density (10 kA/cm2) at various temperatures. The composition of indium (In) was 0, 4, 8, and 16 in wt%. The interconnection of Sn–In solder alloys with a Cu substrate was prepared by reflow soldering at 250 °C. Microstructural analysis confirmed that primary intermetallic compound formed at the interface of the Cu/Sn–In strip was Cu6(In,Sn)5 regardless of In contents. Sn grain size became finer as In content increased. After current stressing, electrical failure was caused by the formation of voids and cracks at the cathode because of the migration of Cu atoms. Sn–16In alloy that has fine grain structure exhibits excellent EM resistance primarily due to the retardation of Cu migration.

Keywords

ElectromigrationCrystallographic structureIn
Type
Articles
Information
Journal of Materials Research , Volume 26 , Issue 20 , 28 October 2011 , pp. 2624 - 2631
Copyright
Copyright © Materials Research Society 2011

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