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Indentation-induced phase transformations in silicon as a function of history of unloading

Published online by Cambridge University Press:  31 January 2011

N. Fujisawa ,
R.T. Keikotlhaile ,
J.E. Bradby  and
J.S. Williams
N. Fujisawa*
Affiliation:
Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, Australian National University, Canberra, ACT 0200, Australia
R.T. Keikotlhaile
Affiliation:
Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, Australian National University, Canberra, ACT 0200, Australia
J.E. Bradby
Affiliation:
Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, Australian National University, Canberra, ACT 0200, Australia
J.S. Williams
Affiliation:
Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, Australian National University, Canberra, ACT 0200, Australia
*
a)Address all correspondence to this author. e-mail: [email protected]
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Abstract

A crystalline silicon surface, loaded by a Berkovich indenter to a constant maximum load, was unloaded using three unload functions, each consisting of five linear segments of equal time period. The first function had an exponentially decaying unload rate and was found to promote a pop-out event more readily than the second function, having a linear unload rate, or the third case with its unload rate increasing with time. Statistical analyses of experimental data suggest that the unload rate within 20%–30% of the maximum load, when the mean contact pressure in the indent volume is roughly 5 to 6 GPa, is the most dominant factor influencing the probabilistic occurrence of a pop-out event. Unload rates at higher load levels were shown to have a much less significant effect on the probability of pop-out occurrence.

Keywords

Nano-indentationPhase transformationSi
Type
Articles
Information
Journal of Materials Research , Volume 23 , Issue 10 , October 2008 , pp. 2645 - 2649
Copyright
Copyright © Materials Research Society 2008

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References

REFERENCES

1Hu, J.Z., Merkle, L.D., Menoni, C.S., Spain, I.L.: Crystal data for high pressure phases of silicon. Phys. Rev. B 34, 4679 1986CrossRefGoogle ScholarPubMed
2Jamieson, J.C.: Crystal structures at high pressures of metallic modifications of silicon and germanium. Science 139, 762 1963CrossRefGoogle ScholarPubMed
3Crain, J., Ackland, G.J., Maclean, J.R., Piltz, R.O., Hatton, P.D., Pawley, G.S.: Reversible pressure-induced structural transitions between metastable phases of silicon. Phys. Rev. B 50, 13043 1994CrossRefGoogle ScholarPubMed
4Piltz, R.O., Maclean, J.R., Clark, S.J., Ackland, G.J., Hatton, P.D., Crain, J.: Structure and properties of silicon XII: A complex tetrahedrally bonded phase. Phys. Rev. B 52, 4072 1995CrossRefGoogle ScholarPubMed
5Domnich, V., Gogotsi, Y.: Phase transformations in silicon under contact loading. Rev. Adv. Mater. Sci. 3, 1 2002Google Scholar
6Bradby, J.E., Williams, J.S., Wong-Leung, J., Swain, M.V., Munroe, P.: Mechanical deformation in silicon by micro-indentation. J. Mater. Res. 16, 1500 2001CrossRefGoogle Scholar
7Domnich, V., Gogotsi, Y., Dub, S.: Effect of phase transformations on the shape of the unloading curve in the nanoindentation of silicon. Appl. Phys. Lett. 76, 2214 2000CrossRefGoogle Scholar
8Jang, J.I., Lance, M.J., Wen, S., Tsui, T.Y., Pharr, G.M.: Indentation-induced phase transformation in silicon: Influences of load, rate and indenter angle on the transformation behavior. Acta Mater. 53, 1759 2005CrossRefGoogle Scholar
9Juliano, T., Gogotsi, Y., Domnich, V.: Effect of indentation unloading conditions on phase transformation induced events in silicon. J. Mater. Res. 18, 1192 2003CrossRefGoogle Scholar
10Yan, J., Takahashi, H., Gai, X., Harada, H., Tamaki, J., Kuriyagawa, T.: Load effects on the phase transformation of single-crystal silicon during nanoindentation tests. Mater. Sci. Eng., A 423, 19 2006CrossRefGoogle Scholar
11Pharr, G.M., Oliver, W.C., Clarke, D.R.: The mechanical behavior of silicon during small-scale indentation. J. Electron. Mater. 19, 881 1990CrossRefGoogle Scholar