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Highly (002)-oriented ZnO film grown by ultrasonic spray pyrolysis on ZnO-seeded Si (100) substrate

Published online by Cambridge University Press:  03 March 2011

Jun-Liang Zhao ,
Xiao-Min Li ,
Sam Zhang ,
Chang Yang ,
Xiang-Dong Gao  and
Wei-Dong Yu
Jun-Liang Zhao
Affiliation:
State Key Laboratory of High-Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, People’s Republic of China; and Graduate School of Chinese Academy of Sciences, Beijing 100039, People’s Republic of China
Xiao-Min Li*
Affiliation:
State Key Laboratory of High-Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, People’s Republic of China
Sam Zhang
Affiliation:
School of Mechanical and Aerospace Engineering, Nanyang Technological University, Singapore 639798
Chang Yang
Affiliation:
State Key Laboratory of High-Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, People’s Republic of China; and Graduate School of Chinese Academy of Sciences, Beijing 100039, People’s Republic of China
Xiang-Dong Gao
Affiliation:
State Key Laboratory of High-Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, People’s Republic of China
Wei-Dong Yu
Affiliation:
State Key Laboratory of High-Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, People’s Republic of China
*
a)Address all correspondence to this author. e-mail: [email protected]
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Abstract

ZnO films are grown by the ultrasonic spray pyrolysis method on ZnO seeding layer deposited on Si (100) by pulsed laser deposition. The resultant film possesses a columnar microstructure perpendicular to the substrate and exhibits smooth, dense, and uniform morphology. The preferred orientation along the c-axis of the film is significantly enhanced compared to that without the seeding layer. ZnO film grown on ZnO-seeded silicon exhibits higher hall mobility, lower resisitivity, and higher photoluminescence intensity.

Keywords

Crystal growthFilmSpray pyrolysis
Type
Articles
Information
Journal of Materials Research , Volume 21 , Issue 9 , September 2006 , pp. 2185 - 2190
Copyright
Copyright © Materials Research Society 2006

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References

REFERENCES

1Pearton, S.J., Norton, D.P., Ip, K., Heo, Y.W., and Steiner, T.: Recent progress in processing and properties of ZnO. Prog. Mater. Sci. 50, 293 (2005).CrossRefGoogle Scholar
2Norton, D.P., Heo, Y.W., Ivill, M.P., Ip, K., Pearton, S.J., Chisholm, M.F., and Steiner, T.: ZnO: Growth, doping and processing. Mater. Today 7, 34 (2004).CrossRefGoogle Scholar
3Look, D.C. and Claflin, B.: P-type doping and devices based on ZnO. Phys. Status Solidi 241, 624 (2004).CrossRefGoogle Scholar
4Service, R.F.: Will UV lasers beat the blues? Science 276, 895 (1997).CrossRefGoogle Scholar
5Tsukazaki, A., Ohtomo, A., Onuma, T., Ohtani, M., Makino, T., Sumiya, M., Ohtani, K., Chichibu, S.F., Fuke, S., Segawa, Y., Ohno, H., Koinuma, H., and Kawasaki, M.: Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO. Nat. Mater. 4, 42 (2005).CrossRefGoogle Scholar
6Joseph, M., Tabata, H., Saeki, H., Ueda, K., and Kawai, T.: Fabrication of the low-resistive p-type ZnO by codoping method. Physica B (Amsterdam) 302–303, 140 (2001).CrossRefGoogle Scholar
7Zhao, J.L., Li, X.M., Bian, J.M., Yu, W.D., and Gao, X.D.: Structural, optical and electrical properties of ZnO films grown by pulsed laser deposition (PLD). J. Cryst. Growth 276, 507 (2005).CrossRefGoogle Scholar
8Rommeluere, J.F., Svob, L., Jomard, F., Mimila-Arroyo, J., Lusson, A., Sallet, V., and Marfaing, Y.: Electrical activity of nitrogen acceptors in ZnO films grown by metalorganic vapor phase epitaxy. Appl. Phys. Lett. 83, 287 (2003).CrossRefGoogle Scholar
9Lin, C.C. and Chen, S.Y.: Properties of nitrogen-implanted p-type ZnO films grown on Si3N4/Si by radio-frequency magnetron sputtering. Appl. Phys. Lett. 84, 5040 (2004).CrossRefGoogle Scholar
10Barnes, T.M., Olson, K., and Wolden, C.A.: On the formation and stability of p-type conductivity in nitrogen-doped zinc oxide. Appl. Phys. Lett. 86, 112112 (2005).CrossRefGoogle Scholar
11Paul, G.K. and Sen, S.K.: Sol-gel preparation, characterization and studies on electrical and thermoelectrical properties of gallium doped zinc oxide films. Mater. Lett. 57, 742 (2002).CrossRefGoogle Scholar
12Paraguay, F., Estrada, W., Acosta, D.R., Andrade, E., and Miki-Yoshiba, M.: Growth, structure and optical characterization of high quality ZnO thin films obtained by spray pyrolysis. Thin Solid Films 350, 192 (1999).CrossRefGoogle Scholar
13Bian, J.M., Li, X.M., Gao, X.D., Yu, W.D., and Chen, L.D.: Deposition and electrical properties of N-In codoped p-type ZnO films by ultrasonic spray pyrolysis. Appl. Phys. Lett. 84, 541 (2004).CrossRefGoogle Scholar
14Zhang, C.Y., Li, X.M., Bian, J.M., Yu, W.D., and Gao, X.D.: Structural and electrical properties of nitrogen and aluminum codoped p-type ZnO films. Solid State Commun. 132, 75 (2004).CrossRefGoogle Scholar
15Zhao, J.L., Li, X.M., Bian, J.M., Yu, W.D., and Zhang, C.Y.: Growth mechanism for N-doped ZnO film grown by spray pyrolysis method. J. Cryst. Growth 280, 495 (2005).CrossRefGoogle Scholar
16Mirica, E., Kowach, G., Evans, P., and Du, H.: Morphological evolution of ZnO thin films deposited by reactive sputtering. Cryst. Growth Des. 4, 147 (2004).CrossRefGoogle Scholar
17Barna, P.B. and Adamik, M.: Science and Technology of Thin Films (World Scientific Publishing Co. Pte. Ltd., Singapore, 1995), p. 1.CrossRefGoogle Scholar
18Ziegler, E., Heinrich, A., Oppermann, H., and Stover, G.: Electrical properties and non-stoichiometry in ZnO single crystals. Phys. Status Solidi A 66, 635 (1981).CrossRefGoogle Scholar
19Look, D.C., Hemsky, J.W., and Sizelove, J.R.: Residual native shallow donor in ZnO. Phys. Rev. Lett. 82, 2552 (1999).CrossRefGoogle Scholar
20Van de Walle, C.G.: Hydrogen as a cause of doping in zinc oxide. Phys. Rev. Lett. 85, 1012 (2000).CrossRefGoogle Scholar
21Chen, L.Y., Chen, W.H., Wang, J.J., Hong, F.C.N., and Su, Y.K.: Hydrogen-doped high conductivity ZnO films deposited by radio-frequency magnetron sputtering. Appl. Phys. Lett. 85, 5628 (2004).CrossRefGoogle Scholar
22Vanheusden, K., Warren, W.L., Seager, C.H., Tallant, D.R., Voigt, J.A., and Gnade, B.E.: Mechanisms behind green photoluminescence in ZnO phosphor powders. J. Appl. Phys. 79, 7983 (1996).CrossRefGoogle Scholar
23Ma, Y., Du, G.T., Yang, S.R., Li, Z.T., Zhao, B.J., Yang, X.T., Yang, T.P., Zhang, Y.T., and Liu, D.L.: Control of conductivity type in undoped ZnO thin films grown by metalorganic vapor phase epitaxy. J. Appl. Phys. 95, 6268 (2004).CrossRefGoogle Scholar
24Matsumoto, T., Kato, H., Miyamoto, K., Sano, M., and Zhukov, E.A.: Correlation between grain size and optical properties in zinc oxide thin films. Appl. Phys. Lett. 81, 1231 (2002).CrossRefGoogle Scholar