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Growth and photoluminescence characterization of ZnSe layers grown on (100)Ge by molecular beam epitaxy

Published online by Cambridge University Press:  31 January 2011

R.M. Park  and
H.A. Mar
R.M. Park
Affiliation:
3M Canada Inc., Corporate Research and Development, 4925 Dufferin Street, Downsview, Ontario, Canada M3H 5T6
H.A. Mar
Affiliation:
3M Canada Inc., Corporate Research and Development, 4925 Dufferin Street, Downsview, Ontario, Canada M3H 5T6
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Abstract

ZnSe layers have been grown on (100)-oriented Ge substrates by molecular beam epitaxy for the first time. The optimum in-situ Ge substrate preparation technique was found to consist of argon-ion sputtering at room temperature followed by annealing at ∼400°C. This cleaning technique provided Ge surfaces which exhibited (2X2) surface reconstruction as observed by reflection high-energy electron diffraction and which had O and C contamination levels below the detection limit of the Auger electron spectroscopy system. ZnSe layers grown on argon-ion sputtered and annealed (100)Ge substrates using a variety of substrate temperatures and Zn to Se beam pressure ratios were characterized by 4.2 K photoluminescence (PL) measurements. The highest quality layers as judged by PL analysis were grown in the substrate temperature range, 310–350°C, with a Zn to Se beam pressure ratio around unity. ZnSe layers grown under these conditions exhibited a dominant donor-bound exciton peak at 2.7976 eV having a minimum linewidth of ∼1.1 meV.

Type
Articles
Information
Journal of Materials Research , Volume 1 , Issue 4 , August 1986 , pp. 543 - 546
Copyright
Copyright © Materials Research Society 1986

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