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Formation and characterization of ohmic contacts to n–AlGaAs using Pd/AuGe/Ag/Au

Published online by Cambridge University Press:  31 January 2011

L.R. Zheng ,
D.J. Lawrence  and
T.N. Blanton
L.R. Zheng
Affiliation:
Corporate Research Laboratories, Eastman Kodak Company, Rochester, New York 14650
D.J. Lawrence
Affiliation:
Corporate Research Laboratories, Eastman Kodak Company, Rochester, New York 14650
T.N. Blanton
Affiliation:
Analytical Technology Division, Eastman Kodak Company, Rochester, New York 14652
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Abstract

Sequential deposition of Pd/AuGe/Ag/Au and rapid thermal annealing at 450 to 550 °C were employed to form a shallow ohmic contact to n–Alx Ga1−x As. Contact resistivity was in the range of (0.7–1) × 10−5 at x = 0.3 to (2–4) × 10−5 ohm-cm2 at x = 0.55. Limited interfacial reaction was verified by ion backscattering and x-ray diffraction techniques and attributed to the stability of Au–Ag solid solutions against underlying substrates. Contacts form at 450 to 500 °C, possibly via solid-state reaction, whereas liquid phase reaction may take place at 550 °C.

Type
Articles
Information
Journal of Materials Research , Volume 8 , Issue 5 , May 1993 , pp. 1045 - 1051
Copyright
Copyright © Materials Research Society 1993

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References

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