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Float-Zone Growth and Properties of Ferroelectric Lead Titanate

Published online by Cambridge University Press:  03 March 2011

N. Maffei  and
G.A. Rossetti Jr.
N. Maffei*
Affiliation:
Materials Technology Laboratory, Natural Resources Canada, Ottawa, Ontario K1A OG3, Canada
G.A. Rossetti Jr.
Affiliation:
Department of Ceramic and Materials Engineering, Rutgers, The State University of New Jersey, Piscataway, New Jersey 08855
*
a)Address all correspondence to this author. e-mail: [email protected] © Her Majesty the Queen in Right of Canada, as represented by the Minister of Natural Resources, 2003.
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Abstract

Lead titanate (PbTiO3) is a ferroelectric/piezoelectric material widely used in medical ultrasound transducers and infrared detectors. It is also important as an end member of morphotropic solid-solution systems such as Pb(Zn1/3Nb2/3)–PbTiO3 (PZN–PT) and Pb(Mg1/3Nb2/3)–PT (PMN–PT) that exhibit exceptional electromechanical properties as oriented single crystals. The float-zone technique has been used to grow pure crystals of lead titanate. To the best of the authors’ knowledge, this is the first time that the growth of this compound by the float-zone technique has been reported. The principal advantage of the float-zone technique is that no container is required so that a uniform distribution of chemical constituents can be obtained while eliminating problems of heterogeneous nucleation and metal contamination at the container wall. Although large single crystals were not obtained in the current study primarily due to instabilities of the molten liquid zone, the combined results of characterization by electron probe microanalysis, x-ray diffraction, specific heat, and dielectric permittivity measurements show that the float-zone crystal growth technique can produce lead titanate crystals of high chemical and phase purity. However, the results show that to obtain large single crystals, the stability of the molten zone at low cooling rates must be improved.

Keywords

Crystal growthFerroelectricZone melting
Type
Articles
Information
Journal of Materials Research , Volume 19 , Issue 3 , March 2004 , pp. 827 - 833
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

1Lines, M.E. and Glass, A.M.: Principles and Applications of Ferroelectrics and Related Materials (Clarendon Press, Oxford, 1977).Google Scholar
2Park, S.E. and Shrout, T.R., J. Appl. Phys. 82, 1804 (1997).CrossRefGoogle Scholar
3Seabaugh, M.M., Cheney, G.L., Hasinska, K., Dawson, W.J. and Swartz, S.L. in Proceedings of the 12th IEEE International Symposium on the Applications of Ferroelectrics edited by Streiffer, S.K., Gibbons, B.H., and Tsurumi, T., (Institute of Electrical and Electronic Engineers, New York, 2001) p.377.Google Scholar
4Remeika, J.P. and Glass, A.M., Mater. Res. Bull. 5, 37 (1970).CrossRefGoogle Scholar
5Gavrilyachencko, V.G., Spinko, R.I., Martynenko, M.A. and Fesenko, E.G.Soviet Physics – Solid State 12, 1203 (1970).Google Scholar
6Wojcik, K., Ferroelectrics 99, 5 (1989).CrossRefGoogle Scholar
7Sun, B.N., Huang, Y. and Payne, D.A., J. Cryst. Growth 128, 867 (1993).CrossRefGoogle Scholar
8Tsurumi, T., Kakuta, K. and Fukunaga, O., Ferroelectrics 196, 179 (1997).CrossRefGoogle Scholar
9Chou, C.C. and Chen, C.S., Ceram. Int. 26, 693 (2000).CrossRefGoogle Scholar
10Grabmaier, B.C., Ferroelectrics 13, 501 (1970).CrossRefGoogle Scholar
11Gelabert, M.C., Laudise, R.A. and Riman, R.E., J. Cryst. Growth 197, 195 (1999).CrossRefGoogle Scholar
12Laudise, R.A.: The Growth of Single Crystals (Prentice-Hall, Englewood Cliffs, NJ, 1970).Google Scholar
13Kitamura, K. and Shindo, I., J. Cryst. Growth 65, 543 (1983).CrossRefGoogle Scholar
14Iida, J., Takekawa, S. and Kimizuka, N., J. Cryst. Growth 102, 398 (1990).CrossRefGoogle Scholar
15Nabokin, P.I., Souptel, D. and Balbashov, A.M., J. Cryst. Growth 250, 397 (2003).CrossRefGoogle Scholar
16Maffei, N., Quon, D.H.H., Aota, J., Chen, T.T., McCaffrey, J. and Charbonneau, SJ. Cryst. Growth 181, 382 (1997).CrossRefGoogle Scholar
17Maffei, N., Quon, D.H.H., Aota, J., Kuriakose, A.K. and Saghir, M.Z.: J. Cryst. Growth 180, 105 (1997).CrossRefGoogle Scholar
18Saghir, M.Z. (private communication).Google Scholar
19Rossetti, G.A. Jr.Cahill, P.F. Jr.Biederman, R.R. and Sacco, A. Jr., Mater. Lett. 41, 72 (1999).CrossRefGoogle Scholar
20Shirane, G. and Sawaguchi, E., Phy. Rev. 81, 458 (1951).CrossRefGoogle Scholar
21Rossetti, G.A. Jr.Cline, J.P. and Navrotsky, A., J. Mater. Res. 13, 3197 (1998).CrossRefGoogle Scholar
22Mabud, S.A. and Glazer, A.M., J. Appl. Cryst. 12, 49 (1979).CrossRefGoogle Scholar
23Haun, M.J., Furman, E., Jang, S.J., McKinstry, H.A. and Cross, L.E., J. Appl. Phys. 62, 3331 (1987).CrossRefGoogle Scholar
24Whatmore, R.W., Clarke, R. and Glazer, A.M., J. Phys. C: Solid State Phys. 11, 3089 (1978).CrossRefGoogle Scholar