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Epitaxial Growth of Patterned SrBi2Ta2O9 Lines by Channel Stamping

Published online by Cambridge University Press:  31 January 2011

Jin Hyeok Kim
Affiliation:
Materials Department and Materials Research Laboratory, University of California, Santa Barbara, California 93106
Frederick F. Lange
Affiliation:
Materials Department and Materials Research Laboratory, University of California, Santa Barbara, California 93106
Chae-Il Cheon
Affiliation:
Department of Materials & Chemical Engineering, Hoseo University, San29–1, Sechul-Ri, Baebang-Myun, Asan-Si, Chungnam 336–795, Korea
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Abstract

Patterned epitaxial SrBi2Ta2O9 (SBT) lines with (00l) out-of-plane orientation were grown on a (001) SrTiO3 substrate by the novel “channel stamping” method. Parallel channels in a poly(dimethylsiloxane) stamp were filled with a metalorganic precursor solution by spin coating. After solvent evaporation, the solid precursor within the channels was transferred to the substrate by stamping. Stamped precursor lines were pyrolyzed at 350 °C/1 h and then heated to 850 °C/1 h. It was shown by x-ray diffraction and scanning electron microscopy that patterned SBT lines were epitaxial, had a smooth surface with c-axis out-of-plane orientation, and a single in-plane orientation.

Type
Articles
Copyright
Copyright © Materials Research Society 1999

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References

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