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Epitaxial growth of copper nanowire arrays grown on H-terminated Si(110) using glancing-angle deposition

Published online by Cambridge University Press:  01 December 2004

H. Alouach  and
G.J. Mankey
H. Alouach*
Affiliation:
Center for Materials for Information Technology and Department of Physics and Astronomy, The University of Alabama, Tuscaloosa, Alabama 35487
G.J. Mankey
Affiliation:
Center for Materials for Information Technology and Department of Physics and Astronomy, The University of Alabama, Tuscaloosa, Alabama 35487
*
a) Address all correspondence to this author. e-mail: [email protected]
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Abstract

We report the growth of epitaxial nanowire arrays using the technique of glancing- angle deposition with substrate rotation. Epitaxial copper nanowire arrays were deposited on H-terminated Si(110) using electron beam evaporation. The nanowire arrays were characterized by x-ray diffraction, atomic force microscopy, and scanning electron microscopy. Individual nanowires were confirmed to be single crystalline by examination with transmission electron microscopy. The epitaxial growth involves twin formation with the epitaxial orientation relationships: Cu(111)//Si(110) with Cu[110]//Si[001] and Cu[110//Si[001] for each of the twins. As the angle of incidence is increased, Cu grows as isolated columns with a spacing that increases as the angle of incidence is increased. However, the thickness limit for epitaxial growth is reduced as the angle of incidence is increased, and it is reduced to approximately 300 nm for a deposition angle of 75°. The x-ray rocking curves for samples deposited at increasing polar angles show steadily improving crystal orientation up to a deposition angle of about 35°. Beyond 65° deposition angle, the rocking curves show significantly sharper split diffraction peaks indicating that there are distinct orientations. In addition, the split peaks have a much lower full width at half maximum. The observed behavior is explained based on arguments involving unidirectional diffusion arising from adatom parallel momentum.

Keywords

EpitaxyNanoscaleX-ray diffraction (XRD)
Type
Articles
Information
Journal of Materials Research , Volume 19 , Issue 12 , December 2004 , pp. 3620 - 3625
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

1Jiang, H., Klemmer, T.J. and Barnard, J.A.: Epitaxial growth of Cu on Si by magnetron sputtering. J. Vac. Sci. Technol. A 16, 3376 (1998).CrossRefGoogle Scholar
2Krastev, E.T., Voice, L.D. and Tobin, R.G.: Surface morphology and electric conductivity of epitaxial Cu(100) films grown on H-terminated Si(100). J. Appl. Phys. 79, 6865 (1996).CrossRefGoogle Scholar
3Demczyk, B.G., Naik, R., Auner, G., Kota, C. and Rao, U.: Growth of Cu films on hydrogen terminated Si(100) and Si(111) surfaces. J. Appl. Phys. 75, 1956 (1994).CrossRefGoogle Scholar
4Liu, F., Yu, C., Shen, L., Barnard, J.A. and Mankey, G.J.: The magnetic properties of cobalt films produced by glancing angle deposition. IEEE Trans. Magn. 36, 2939 (2000).CrossRefGoogle Scholar
5Robbie, K. and Brett, M.J.: Sculptured thin films and glancing angle deposition: Growth mechanics and applications. J. Vac. Sci. Technol. A 15, 1460 (1997).CrossRefGoogle Scholar
6Dick, B., Brett, M.J., Smy, T.J., Freeman, M.R., Malac, M. and Egerton, R.F.: Periodic magnetic microstructures by glancing angle deposition. J. Vac. Sci. Technol. A 18, 1838 (2000).CrossRefGoogle Scholar
7Karabacak, T., Wang, G-C. and Lu, T-M.: Physical self-assembly and the nucleation of three-dimensional nanostructures by oblique angle deposition. J. Vac. Sci. Technol. A 22, 1778 (2004).CrossRefGoogle Scholar
8Karabacak, T., Mallikarjunan, A., Singh, J.P., Ye, D., Wang, G-C. and Lu, T-M.: β-phase tungsten nanorod formation by oblique-angle sputter deposition. Appl. Phys. Lett. 82, 3096 (2003).CrossRefGoogle Scholar
9Bratland, K., Foo, Y.L., Desjardins, P. and Greene, J.E.: Sn-enhanced epitaxial thickness during low-temperature Ge(001) molecular-beam epitaxy. Appl. Phys. Lett. 83, 4247 (2003).CrossRefGoogle Scholar
10Venables, J.A. and Price, G.L. in Epitaxial Growth, edited by Matthews, J.W. (Academic, New York, NY, 1975), Part B, Chap. 4, pp. 381, 436Google Scholar
11Alouach, H. and Mankey, G.J.: Texture orientation of glancing angle deposited copper nanowire arrays. J. Vac. Sci. Technol. A 22, 1379 (2004).CrossRefGoogle Scholar
12Hara, K.Anomalous magnetic anisotropy of thin films evaporated at oblique incidence. J. Sci. Hiroshima Univ., Ser. A-II, No. 34, 1970 , pp. 139–163Google Scholar
13Bauer, E. in Single Crystal Films, edited by Francombe, M. H. and Sato, H. (Pergamon, Oxford, U.K., 1964), pp. 43, 65Google Scholar
14Van der Drift, A.: Evolutionary selection, A principle governing growth orientation in vapour-deposited layers. Philips Res. Rep. 22, 267 (1967).Google Scholar
15Dahmen, U.: Orientation relationships in precipitation systems. Acta Metall. 30, 63 (1982).CrossRefGoogle Scholar