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Electronic excitation induced controlled modifications of semiconductor-to-metal transition in epitaxial VO2 thin films

Published online by Cambridge University Press:  06 December 2011

Alok Gupta ,
Rahul Singhal ,
Jagdish Narayan  and
Devesh K. Avasthi
Alok Gupta*
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695
Rahul Singhal
Affiliation:
Inter University Accelerator Center, New Delhi 110067, India
Jagdish Narayan
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695
Devesh K. Avasthi
Affiliation:
Inter University Accelerator Center, New Delhi 110067, India
*
a)Address all correspondence to this author. e-mail: [email protected]
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Abstract

We report controlled modifications in the semiconductor-to-metal transition characteristics of VO2 single-crystal thin films induced by swift heavy ion (SHI) irradiation with varying ion fluences. At very high energies of ions (200 MeV Au), the electronic stopping (∼2009 eV/Å) dominates over nuclear stopping (∼16 eV/Å). Under these extreme electronic excitation conditions caused by electronic stopping and the passage of SHIs through the entire thickness of the film, creation of certain unique type of defects and disordered regions occurs. X-ray diffraction, Raman spectroscopy, infrared transmission spectroscopy, x-ray photoelectron spectroscopy (XPS), and electrical measurements were performed to investigate the characteristics and role of these defects on structural, optical, and electrical properties of VO2 thin films. XPS and electrical resistivity measurements suggest that the ion irradiation induces localized defect states that appear to correlate well with the creation of disordered regions in the VO2 thin films. The high-energy heavy-ion irradiation changes the transition characteristics drastically from a first-order to a second-order transition (electronic—Mott type). The low-temperature conductance data for these ion-irradiated films fit well with the quasiamorphous model for resistivity of VO2, where ion irradiation is believed to create mid-bandgap defect states.

Keywords

Metal–insulator transitionIon–solid interactionsRadiation effects
Type
Articles
Information
Journal of Materials Research , Volume 26 , Issue 23 , 14 December 2011 , pp. 2901 - 2906
Copyright
Copyright © Materials Research Society 2011

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References

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