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Effects of the band offset on interfacial deep levels

Published online by Cambridge University Press:  31 January 2011

Richard P. Beres ,
Roland E. Allen  and
John D. Dow
Richard P. Beres
Affiliation:
Department of Physics, Texas A & M University, College Station, Texas, 77843
Roland E. Allen
Affiliation:
Department of Physics, University of Notre Dameb) Notre Dame, Indiana 46556 and Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
John D. Dow
Affiliation:
Department of Physics, University of Notre Dameb) Notre Dame, Indiana 46556 and Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
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Abstract

The energy levels of antisite defects at a GaAs/Ge (110) interface are calculated and shown to be essentially unaltered with respect to the GaAs valence band maximum by different choices of the valence band offset.

Type
Articles
Information
Journal of Materials Research , Volume 3 , Issue 1 , February 1988 , pp. 164 - 166
Copyright
Copyright © Materials Research Society 1988

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References

REFERENCES

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