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Effects of misfit dislocation and film-thickness on the residual stresses in epitaxial thin film systems: Experimental analysis and modeling

Published online by Cambridge University Press:  28 September 2012

Mei Liu
Affiliation:
School of Mechanical and Manufacturing Engineering, The University of New South Wales, New South Wales 2052, Australia
Haihui Ruan
Affiliation:
School of Mechanical and Manufacturing Engineering, The University of New South Wales, New South Wales 2052, Australia
Liangchi Zhang*
Affiliation:
School of Mechanical and Manufacturing Engineering, The University of New South Wales, New South Wales 2052, Australia
Alireza Moridi
Affiliation:
School of Mechanical and Manufacturing Engineering, The University of New South Wales, New South Wales 2052, Australia
*
a)Address all correspondence to this author. e-mail: [email protected]
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Abstract

In a thin film system involving dissimilar materials, the residual stresses and microstructural defects are inevitable due to the misfits of lattice structures and thermal properties of the materials. Unfortunately, the relationship between the stresses and interface defects is still unclear to date. This article aims to clarify such an important relationship by a finite element (FE) analysis incorporating the dislocation distribution from high-resolution transmission electron microscopy. Layer removal and Raman spectroscopy were also conducted to explore the film-thickness effect. It was found that that residual stress variation in a thin film system is caused by the coupled effect of lattice-thermal misfits and discrete interfacial dislocations, that the residual stresses are dependent on the film thickness, and that it is particularly important to identify the correct density of interface dislocations for an accurate residual stress calculation by a FE analysis.

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Articles
Copyright
Copyright © Materials Research Society 2012

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References

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