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Effects of HfO2 buffer layer thickness on the properties of Pt/SrBi2Ta2O9/HfO2/Si structure

Published online by Cambridge University Press:  31 January 2011

Ching-Chich Leu ,
Chen-Han Lin ,
Chao-Hsin Chien  and
Ming-Jui Yang
Ching-Chich Leu*
Affiliation:
Department of Chemical and Materials Engineering, National University of Kaohsiung, Kaohsiung 811, Taiwan, Republic of China
Chen-Han Lin
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30043, Taiwan, Republic of China
Chao-Hsin Chien
Affiliation:
Department of Electronics Engineering, National Chiao Tung University, Hsinchu 30050, Taiwan, Republic of China
Ming-Jui Yang
Affiliation:
National Nano Device Laboratories, Hsinchu 30043, Taiwan, Republic of China
*
a)Address all correspondence to this author. e-mail: [email protected]
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Abstract

We investigated structural and characteristic changes in thin HfO2 films (<10 nm) by varying their thicknesses and also examined their influence on the properties of Pt/SrBi2Ta2O9/HfO2/Si metal/ferroelectric/insulator/semiconductor (MFIS) structures. HfO2 films with different thicknesses were found to exhibit rather distinct characteristics and to profoundly affect the properties of the fabricated MFIS capacitor. We found that, when employing 3.2-nm-thick HfO2 as the buffer layer, the MFIS capacitor showed good memory performance at low operation voltage. However, this study demonstrated that some of the HfO2 limited its application in MFIS memory, even though it is the most promising alternative gate dielectric material.

Keywords

DielectricFerroelectricTransmission electron microscopy (TEM)
Type
Articles
Information
Journal of Materials Research , Volume 23 , Issue 7 , July 2008 , pp. 2023 - 2032
Copyright
Copyright © Materials Research Society 2008

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References

REFERENCES

1Moll, J.L.Tarui, Y.: A new solid state memory resistor. IEEE Trans. Electron Devices ED-10, 333 1963Google Scholar
2Noda, M., Kodama, K., Kitai, S., Takahashi, M., Kanashima, T.Okuyama, M.: Basic characteristics of metal–ferroelectric–insulator–semiconductor structure using a high-κ PrOx insulator layer. J. Appl. Phys. 93, 4137 2003Google Scholar
3Oishi, Y., Wu, W., Fumoto, K., Okuyama, M.Hamakawa, Y.: Preparation of SrBi2Ta2O9 film at low temperatures and fabrication of a metal/ferroelectric/insulator/semiconductor field effect transistor using Al/SrBi2Ta2O9/CeO2/Si(100) structures. Jpn. J. Appl. Phys. 36, 5908 1997Google Scholar
4Xiong, S.B.Sakai, S.: Memory properties of SrBi2Ta2O9 thin films prepared on SiO2/Si substrates. Appl. Phys. Lett. 75, 1613 1999Google Scholar
5Han, J.P., Koo, S.M., Richter, C.A.Vogel, E.M.: Influence of buffer layer thickness on memory effects of SrBi2Ta2O9/SiN/Si structures. Appl. Phys. Lett. 85, 1439 2004CrossRefGoogle Scholar
6Nakamura, T., Nakao, Y., Kamisawa, A.Takasu, H.: Preparation of Pb(Zr,Ti)O3 thin films on electrodes including IrO2. Appl. Phys. Lett. 65, 1522 1994CrossRefGoogle Scholar
7Kim, Y.T.Shin, D.S.: Memory window of Pt/SrBi2Ta2O9/CeO2/SiO2/Si structure for metal ferroelectric insulator semiconductor field effect transistor. Appl. Phys. Lett. 71, 3507 1997CrossRefGoogle Scholar
8Chien, C.H., Wang, D.Y., Yang, M.J., Lehnen, P., Leu, C.C.Chuang, S.H.: High-performance Pt/SrBi2Ta2O9/HfO2/Si structure for nondestructive readout memory. IEEE Electron Device Lett. 24, 553 2003CrossRefGoogle Scholar
9Schneemeyer, L.F., van Dover, R.B.Fleming, R.M.: High-dielectric constant Hf–Sn–Ti–O thin films. Appl. Phys. Lett. 75, 1967 1999Google Scholar
10Quevedo-Lopez, M., El-Bouanani, M., Addepalli, S., Duggan, J.L., Gnade, B.E., Wallace, R.M., Visokay, M.R., Douglas, M.Colombo, L.: Hafnium interdiffusion studies from hafnium silicate into silicon. Appl. Phys. Lett. 79, 4192 2001CrossRefGoogle Scholar
11Bastos, K.P., Morais, J., Miotti, L., Pezzi, R.P., Soares, G.V., Baumvol, I.J.R., Hegde, R.I., Tseng, H.H.Tobin, P.J.: Oxygen reaction–diffusion in metalorganic chemical vapor deposition HfO2 films annealed in O2. Appl. Phys. Lett. 81, 1669 2002Google Scholar
12Lin, Y.S., Puthenkovilakam, R.Chang, J.P.: Dielectric property and thermal stability of HfO2 on silicon. Appl. Phys. Lett. 81, 2041 2002Google Scholar
13Ayyub, P., Palkar, V.R., Chattopadhyay, S.Multani, M.: The effect of crystal size reduction on lattice symmetry and cooperative properties. Phys. Rev. B: Condens. Matter 51, 6135 1995Google Scholar
14Aizawa, K., Park, B.E., Kawashima, Y., Takahashi, K.Ishiwara, H.: Impact of HfO2 buffer layers on data retention characteristics of ferroelectric-gate field-effect transistors. Appl. Phys. Lett. 85, 3199 2004Google Scholar
15Park, B.E., Takahashi, K.Ishiwara, H.: Five-day-long ferroelectric memory effect in Pt/(Bi,La)4Ti3O12/HfO2/Si structures. Appl. Phys. Lett. 85, 4448 2004CrossRefGoogle Scholar
16Takahashi, K., Aizawa, K., Park, B.E.Ishiwara, H.: Thirty-day-long data retention in ferroelectric-gate field-effect transistors with HfO2 buffer layers. Jpn. J. Appl. Phys. 44, 6218 2005Google Scholar
17Wang, D.Y.Chang, C.Y.: Basic characteristics of Pt/SrBi2Ta2O9/HfO2/Si structure using layer-by-layer crystallization. J. Electrochem. Soc. 152, G678 2005Google Scholar
18Leu, C.C., Leu, C.F., Chien, C.H., Yang, M.J., Huang, R.H., Lin, C.H.Hsu, F.Y.: Properties of Pt/SrBi2Ta2O9/ BL/Si MFIS structures with HfO2, SiO2 and Si3N4 buffer. Electrochem. Solid-State Lett. 10, G25 2007Google Scholar
19Wang, J., Li, H.P.Stivens, R.: Hafnia and hafnia-toughened ceramics. J. Mater. Sci. 27, 5397 1992CrossRefGoogle Scholar
20He, J.Q., Teren, A., Jia, C.L., Ehrhart, P., Urban, K., Waser, R.Wang, R.H.: Microstructure and interfaces of HfO2 thin films grown on silicon substrates. J. Cryst. Growth 262, 295 2004Google Scholar
21Terasawa, T., Akimoto, K., Mizuno, Y., Ichimiya, A., Sumitani, K., Takahashi, T., Zhang, X.W., Sugiyama, H., Kawata, H., Nabatame, T.Toriumi, A.: Crystallization process of high-κ gate dielectrics studied by surface x-ray diffraction. Appl. Surf. Sci. 244, 16 2005Google Scholar
22Garvie, R.C.: Stabilization of the tetragonal structure in zirconia microcrystals. J. Phys. Chem. 82, 218 1978CrossRefGoogle Scholar
23Rodrguez, M.A., Boyle, T.J., Hernandez, B.A., Buchheit, C.D.Eatough, M.O.: Formation of SrBi2Ta2O9: Part I. Evidence of a bismuth-deficient pyrochlore phase. J. Mater. Res. 11, 2282 1996Google Scholar
24Lee, H.N., Kim, Y.T.Choh, S.H.: Comparison of memory effect between YMnO3 and SrBi2Ta2O9 ferroelectric thin films deposited on Si substrates. Appl. Phys. Lett. 76, 1066 2000Google Scholar
25Gutowski, M., Jaffe, J.E., Liu, C.L., Stoker, M., Hegde, R.I., Rai, R.S.Tobin, P.J.: Thermodynamic stability of high-κ dielectric metal oxides ZrO2 and HfO2 in contact with Si and SiO2. Appl. Phys. Lett. 80, 1897 2002Google Scholar
26Teren, A.R., Ehrhart, P., Waser, R., He, J.Q., Jia, C.L., Schumacher, M., Lindner, J., Baumann, P.K., Leedham, T.J., Rushworth, S.R.Jones, A.C.: Comparison of hafnium precursors for the MOCVD of HfO2 for gate dielectric applications. Integrated Ferroelectrics 57, 1163 2003Google Scholar
27Ferrari, S.Scarel, G.: Oxygen diffusion in atomic layer deposited ZrO2 and HfO2 thin films on Si(100). J. Appl. Phys. 96, 144 2004Google Scholar
28Kukli, K., Ihanus, J., Ritala, M.Leskela, M.: Tailoring the dielectric properties of HfO2–Ta2O5 nanolaminates. Appl. Phys. Lett. 68, 3737 1996Google Scholar
29Gusev, E.P., Cartier, E., Buchanan, D.A., Gribelyuk, M., Copel, M., Okorn-Schmidt, H.D’Emic, C.: Ultrathin high-κ metal oxides on silicon: Processing, characterization and integration issues. Microelectron. Eng. 59, 341 2001CrossRefGoogle Scholar
30Cho, M., Park, J., Park, H.B., Hwang, C.S., Jeong, J.Hyun, K.S.: Chemical interaction between atomic-layer–deposited HfO2 thin films and the Si substrate. Appl. Phys. Lett. 81, 334 2002CrossRefGoogle Scholar
31Kim, Y.T.Shin, D.S.: Memory window of Pt/SrBi2Ta2O9/CeO2/SiO2/Si structure for metal ferroelectric insulator semiconductor field effect transistor. Appl. Phys. Lett. 71, 3507 1997Google Scholar
32Cho, M.H., Chung, K.B., Whang, C.N., Lee, D.W.Ko, D.H.: Phase separation and electronic structure of Hf-silicate film as a function of composition. Appl. Phys. Lett. 87, 242906 2005CrossRefGoogle Scholar
33Hubbard, K.J.Schlom, D.G.: Thermodynamic stability of binary oxides in contact with silicon. J. Mater. Res. 11, 2757 1996Google Scholar