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Effect of CsBr addition on the emission properties of Tm3+ ion in Ge-Ga-S glass

Published online by Cambridge University Press:  03 March 2011

Jay Hyok Song  and
Jong Heo
Jay Hyok Song
Affiliation:
Center for Information Materials, Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang, Gyeongbuk 790-784, Republic of Korea
Jong Heo*
Affiliation:
Center for Information Materials, Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang, Gyeongbuk 790-784, Republic of Korea
*
a) Address all correspondence to this author. e-mail: [email protected]
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Abstract

Absorption and emission properties of Tm3+ in (1-x) (Ge0.25Ga0.10S0.65)-xCsBr glass (x = 0.00–0.12) were investigated. Upon 10 mol% CsBr addition, the absorption cross sections of Tm3+ decreased accompanied by a large increase in the lifetime of the Tm3+:3H4 level to 1.23 ms since Tm3+ ions were surrounded by the Br ions of [GaS3/2Br]− units. As the concentration of Tm3+ increased, the 3H4 level lifetime decreased due to cross relaxation (Tm3+:3H4,3H6→Tm3+:3F4,3F4). Temperature dependence of the 3H4 level lifetime showed that cross relaxation in Tm3+ is a phonon-assisted energy transfer process. When Tm3+ were surrounded by Br ions, cross relaxation among Tm3+ was also suppressed due to a decrease in the transition probability among Tm3+ energy levels, a decrease in phonon energy of the host glasses, as well as an increase in the number of phonons participating in the cross relaxation process. The potential of Tm3+-doped Ge-Ga-S-CsBr glasses for S-band fiber amplifiers is also discussed.

Keywords

AmorphousLuminescenceOptical properties
Type
Articles
Information
Journal of Materials Research , Volume 21 , Issue 9 , September 2006 , pp. 2323 - 2330
Copyright
Copyright © Materials Research Society 2006

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References

REFERENCES

1Allain, J.Y., Monerie, M., and Poignant, H.: Tunable CW lasing around 0.82 1.48, 1.88 and 2.35 μm in thulium-doped fluorozirconate fibre. Electron. Lett. 25, 1660 (1989).CrossRefGoogle Scholar
2Sakamoto, T.: S-band fiber optic amplifiers. Trends in Optics and Photonics 54 (Optical Society of America, Tech. Dig. of OFC 2001) TuQ1 (2001).Google Scholar
3Percival, R.M., Szebesta, D., and Davey, S.T.: Highly efficient CW cascade operation of 1.47 and 1.82 μm transitions in Tm-doped fluoride fibre laser. Electron. Lett. 29, 1054 (1993).CrossRefGoogle Scholar
4Komukai, T., Yamamoto, T., Sugawa, T., and Miyajima, Y.: Upconversion pumped thulium-doped fluoride fiber amplifier and laser operating at 1.47 μm. IEEE J. Quantum Electron. 31, 1880 (1995).CrossRefGoogle Scholar
5Sakamoto, T., Shimizu, M., Kanamori, T., Terunuma, Y., Ohishi, Y., Yamada, M., and Sudo, S.: 1.4-μm-band gain characteristics of a Tm-Ho-doped ZBLYAN fiber amplifier pumped in the 0.8-μm band. IEEE Photo. Tech. Lett. 7, 983 (1995).CrossRefGoogle Scholar
6Braud, A., Girard, S., Doualan, J.L., and Moncorgé, R.: Spectroscopy and fluorescence dynamics of (Tm3+,Tb3+) and (Tm3+,Eu3+) doped LiYF4 single crystals for 1.5-μm laser operation. IEEE J. Quantum Electron. 34, 2246 (1998).CrossRefGoogle Scholar
7Song, J.H., Heo, J., and Park, S.H.: 1.48-μm emission properties and energy transfer between Tm3+ and Ho3+/Tb3+ in Ge-Ga-As-S-CsBr glasses. J. Appl. Phys. 97, 083542 (2005).CrossRefGoogle Scholar
8Taylor, E.R., Ng, L.N., Sessions, N.P., and Buerger, H.: Spectroscopy of Tm3+-doped tellurite glasses for 1470 nm fiber amplifier. J. Appl. Phys. 92, 112 (2002).CrossRefGoogle Scholar
9Gomes, A.S.L.: Recent progress in thulium doped fiber amplifiers. SPIE Proc. 4990, 1 (2003).Google Scholar
10Han, Y.S., Lee, D.J., and Heo, J.: 1.48 μm emission properties and the cross-relaxation mechanism in chalcohalide glass doped with Tm3+. J. Non-Cryst. Solids 321, 210 (2003).CrossRefGoogle Scholar
11Shin, Y.B., Cho, W.Y., and Heo, J.: Multiphonon and cross relaxation phenomena in Ge-As(or Ga)-S glasses doped with Tm3+. J. Non-Cryst. Solids 208, 29 (1996).CrossRefGoogle Scholar
12Shin, Y.B., Kim, J.H., Kim, Y.S., and Heo, J.: Effect of Tb3+ Co-doping on the electron population densities of Tm3+ in Ge-As-Ga-S glasses. J. Appl. Phys. 88, 2515 (2000).CrossRefGoogle Scholar
13Shin, Y.B. and Heo, J.: Modification of the local phonon modes and electron-phonon coupling strengths in Dy3+-doped sulfide glasses for efficient 1.3 μm amplification. Chem. Phys. Lett. 317, 637 (2000).CrossRefGoogle Scholar
14Shin, Y.B., Heo, J., and Kim, H.S.: Enhancement of the 1.31-μm emission properties of Dy3+-doped Ge-Ga-S glasses with the addition of alkali halides. J. Mater. Res. 16, 1318 (2001).CrossRefGoogle Scholar
15Lee, D.J., Heo, J., and Park, S.H.: Energy transfer and 1.48 μm emission properties in chalcohalide glasses doped with Tm3+ and Tb3+. J. Non-Cryst. Solids 331, 184 (2003).Google Scholar
16Song, J.H., Heo, J., and Choi, Y.G.: Ge and Ga K-edge EXAFS analyses on the structure of Ge–Ga–S–CsBr glasses. J. Non-Cryst. Solids 352, 423 (2006).CrossRefGoogle Scholar
17Song, J.H., Heo, J., and Choi, Y.G.: EXAFS investigation on the structural environment of Tm3+ in Ge-Ga-S-CsBr glasses. J. Non-Cryst. Solids (submitted).Google Scholar
18Wang, J., Lincoln, J.R., Brocklesby, W.S., Deol, R.S., Mackechnie, C.J., Pearson, A., Tropper, A.C., Hanna, D.C., and Payne, D.N.: Fabrication and optical properties of lead-germanate glasses and a new glass of optical fibers doped with Tm3+. J. Appl. Phys. 73, 8066 (2000).CrossRefGoogle Scholar
19Miyakawa, T. and Dexter, D.L.: Phonon sidebands, multiphonon relaxation of excited states, and phonon-assisted energy transfer between ions in solids. Phys. Rev. B 1, 2961 (1970).CrossRefGoogle Scholar
20Gschneidner, K.A. Jr. and Eyring, L.: Handbook on the Physics and Chemistry of Rare Earths, Vol. 25 (Elsevier, Amsterdam, Lausanne, New York, Oxford, Shannon, Singapore, Tokyo, 1998), pp. 104, 216.Google Scholar
21Penneman, R.A., Ryan, R.R., Rosenzweig, A., Reisfeld, R., Felsche, J., and Jørgensen, C.K.: Structure and Bonding, Vol. 13 (Springer-Verlag, Berlin, Heidelberg, New York, 1973), pp. 57–74.Google Scholar
22Reisfeld, R. and Eckstein, Y.: Optical spectra of erbium and thulium in germinate glass. J. Non-Cryst. Solids 12, 357 (1973).CrossRefGoogle Scholar
23Chung, W.J. and Heo, J.: Spectroscopic properties and local structure of Eu3+ in Ge-Ga-S-CsBr (or CsCl) glasses. J. Am. Ceram. Soc. 86, 286 (2003).CrossRefGoogle Scholar
24Pauling, L.: The Nature of the Chemical Bond, 3rd ed. (Cornell Univ. Press, Ithaca, New York, 1960), pp. 97, 105.Google Scholar
25Dexter, D.L.: A theory of sensitized luminescence in solids. J. Chem. Phys. 21, 836 (1953).CrossRefGoogle Scholar
26Riseberg, L.A. and Moos, H.W.: Multiphonon orbit-lattice relaxation of excited states of rare-earth ions in crystals. Phys. Rev. 174, 429 (1968).CrossRefGoogle Scholar
27Shin, Y.B., Yang, C.K., and Heo, J.: Optimization of Dy3+-doped Ge-Ga-As-S-CsBr glass composition and its 1.31 μm emission properties. J. Non-Cryst. Solids 298, 153 (2002).CrossRefGoogle Scholar
28Naftaly, M., Shen, S., and Jha, A.: Tm3+-doped tellurite glass for a broadband amplifier at 1.47 μm. Appl. Opt. 39, 4979 (2000).CrossRefGoogle Scholar