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Effect of A-site vacancy order-disorder states on diffuse phase transition of the morphotropic phase boundary Pb1−xBaxNb2O6 ferroelectrics

Published online by Cambridge University Press:  31 January 2011

Xiaoyue Xiao ,
Yan Xu ,
Zhigang Zeng ,
Zhilun Gui ,
Longtu Li  and
Xiaowen Zhang
Xiaoyue Xiao*
Affiliation:
Department of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
Yan Xu
Affiliation:
Department of Chemistry, Tsinghua University, Beijing, 100084, China
Zhigang Zeng
Affiliation:
Department of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
Zhilun Gui
Affiliation:
Department of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
Longtu Li
Affiliation:
Department of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
Xiaowen Zhang
Affiliation:
Department of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
*
a)Author to whom correspondence should be addressed.
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Abstract

The effect of A-site vacancy order-disorder states on diffuse phase transition (DPT) of tungsten bronze Pb1−xBaxNb2O6 (PBN) ferroelectrics has been investigated. The A-site vacancy disordered PBN ceramics exhibit notable variations of the Curie temperatures (i.e., the temperatures at the dielectric maximum permittivities) up to 12 °C in response to frequency changed from 0.1 KHz to 100 KHz. The largest frequency dispersion occurred at the morphotropic phase boundary of 1 − X = 0.63, along with the lowest Curie point. In contrast, the A-site vacancy ordered PBN ceramics present little frequency dispersion in the range of 2 °C from 0.1 KHz to 100 KHz. Dielectric constants of the disordered PBN ceramics were generally higher than those of the ordered ones. In comparison with the ordered PBN ceramics, the Curie points of the disordered ceramics were shifted from lower to higher temperature as the Pb2+ cation percentage was decreased; i.e., the Curie temperatures of the disordered PBN ceramics were lower than those of the ordered ones when 1 − X ≥ 0.70, but higher when 1 − X ≤ 0.65. These differences are suggested to inherently result from the A-site vacancy order-disorder states. The relationship between the A-site vacancy order-disorder states and the dielectric properties has also been confirmed with studies of thermal hysteresis.

Type
Articles
Information
Journal of Materials Research , Volume 11 , Issue 9 , September 1996 , pp. 2302 - 2308
Copyright
Copyright © Materials Research Society 1996

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References

REFERENCES

1.Smolensky, G. A. and Agrenovuskaya, A. I., Sov. Phys. Solid State 1, 1429 (1959).Google Scholar
2.Smolensky, G. A., J. Phys. Soc. Jpn. 28, 26 (1970).Google Scholar
3.Cross, L. E., Ferroelectrics 76, 241 (1987).CrossRefGoogle Scholar
4.Setter, N. and Cross, L. E., J. Appl. Phys. 51 (8), 4356 (1980).CrossRefGoogle Scholar
5.Zhang, Xiao-wen, Wang, Qiang, and Gu, Binglin, J. Am. Ceram. Soc. 74 (11), 2846 (1991).CrossRefGoogle Scholar
6.Stenger, C. F. and Burggraaf, A. J., Phys. Status Solidi (a) 61, 653 (1980).CrossRefGoogle Scholar
7.Randall, C. A., Bhalla, A. S., Shrout, T. R., and Cross, L. E., J. Mater. Res. 5, 829 (1990).CrossRefGoogle Scholar
8.Randall, C. A. and Bhalla, A. S., Jpn. J. Appl. Phys. 29 (2), 327 (1990).CrossRefGoogle Scholar
9.Cai, L. Y., Zhang, X. W., and Wang, X. R., Mater. Lett. 20, 169 (1994).CrossRefGoogle Scholar
10.Neurgaonkar, R. R., Hall, W. F., Oliver, J. R., and Cory, W. K., in Chemistry of Advanced Materials, edited by Rao, C. N. R. (Blackwell Scientific Publications, Oxford, England, 1993), p. 81.Google Scholar
11.Guo, R., Bhalla, A. S., Randall, C. A., Chang, Z. P., and Cross, L. E., J. Appl. Phys. 67 (3), 1453 (1990).CrossRefGoogle Scholar
12.Randall, C. A., Guo, R., Bhalla, A. S., and Cross, L. E., J. Mater. Res. 6, 1770 (1991).CrossRefGoogle Scholar
13.Burns, G. and Dacol, F. H., Phys. Rev. B 30 (7), 4012 (1984).CrossRefGoogle Scholar
14.Burns, G. and Dacol, F. H., Ferroelectrics 104, 25 (1990).CrossRefGoogle Scholar
15.Guo, R., Bhalla, A. S., Randall, C. A., and Cross, L. E., J. Appl. Phys. 67 (10), 6405 (1990).CrossRefGoogle Scholar
16.Xiao, X., Xu, Y., Zeng, Z., Gui, Z., Li, L., and Zhang, X., J. Mater. Res. 11, 650 (1996).CrossRefGoogle Scholar
17.Francombe, M. H., Acta Crystallogr. 13, 131 (1960).CrossRefGoogle Scholar
18.Subbarao, E. C., Shirane, G., and Jona, F., Acta Crystallogr. 13, 226 (1960).CrossRefGoogle Scholar
19.Neurgaonkar, R. R., Nelson, J.G., Oliver, J. R., and Cross, L. E., Mater. Res. Bull. 25, 959 (1990).CrossRefGoogle Scholar